Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STTH30RQ06L2Y-TR DIODE GEN PURP 600V 30A HU3PAK STMicroelectronics	823	-	RFQ	Datasheet	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	Standard	600 V	30A	2.95 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	40 µA @ 600 V	-	Automotive	AEC-Q101	Surface Mount	HU3PAK	-40°C ~ 175°C
IDK12G65C5XTMA2 DIODE SIL CARB 650V 12A TO263-2 Infineon Technologies	1,257	-	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.8 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	-	360pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
1N5614US DIODE GEN PURP 200V 1A D-5A Microchip Technology	250	-	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	200 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	-	-	Surface Mount	D-5A	-65°C ~ 200°C
IDL12G65C5XUMA2 DIODE SIL CARB 650V 12A VSON-4 Infineon Technologies	6,146	-	RFQ	Datasheet	CoolSiC™+	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	190 µA @ 650 V	360pF @ 1V, 1MHz	-	-	Surface Mount	PG-VSON-4	-55°C ~ 150°C
DSEI36-06AS-TUB DIODE GEN PURP 600V 37A TO263AA IXYS	1,403	-	RFQ	Datasheet	FRED	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	37A	1.6 V @ 37 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	-	-	-	Surface Mount	TO-263AA	-40°C ~ 150°C
C4D05120E-TR DIODE SIL CARB 1.2KV 19A TO252-2 Wolfspeed, Inc.	1,520	-	RFQ	Datasheet	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	19A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 1200 V	390pF @ 0V, 1MHz	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
1N5550 DIODE GEN PURP 200V 3A AXIAL Microchip Technology	262	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	200 V	3A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 200 V	-	-	-	Through Hole	B, Axial	-65°C ~ 175°C
STTH75S12W DIODE GEN PURP 1.2KV 75A DO247 STMicroelectronics	295	-	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1200 V	75A	3.2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	50 µA @ 1200 V	-	-	-	Through Hole	DO-247	-40°C ~ 175°C
VS-40EPS12-M3 DIODE GP 1.2KV 40A TO247AC Vishay General Semiconductor - Diodes Division	343	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	40A	1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
FFSP2065A DIODE SIL CARB 650V 25A TO220-2 onsemi	3,918	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	25A	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1085pF @ 1V, 100kHz	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
DNA30E2200PZ-TRL DIODE GEN PURP 2.2KV 30A TO263 IXYS	3,257	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	2200 V	30A	1.26 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 2200 V	7pF @ 700V, 1MHz	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 150°C
C3D08060G DIODE SIL CARB 600V 24A TO263-2 Wolfspeed, Inc.	205	-	RFQ	Datasheet	Z-Rec®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	24A	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	441pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
VS-80APS12-M3 DIODE GEN PURP 1.2KV 80A TO247AC Vishay General Semiconductor - Diodes Division	3,977	-	RFQ	Datasheet	-	TO-247-3	Tube	Active	Standard	1200 V	80A	1.17 V @ 80 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC	-40°C ~ 150°C
IDWD150E65E7XKSA1 DIODE GEN PURP 650V 200A TO247-2 Infineon Technologies	328	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	650 V	200A	2.1 V @ 150 A	Fast Recovery =< 500ns, > 5A (Io)	97 ns	20 µA @ 650 V	-	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
DPG60IM300PC-TRL DIODE GEN PURP 300V 60A TO263AA IXYS	1,956	-	RFQ	Datasheet	HiPerFRED²™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	300 V	60A	1.43 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 300 V	-	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
FFSM2065B DIODE SIL CARB 650V 23.4A 4PQFN onsemi	2,096	-	RFQ	Datasheet	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	23.4A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	866pF @ 1V, 100kHz	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
STPSC10H12G2-TR DIODE SIL CARB 1.2KV 10A D2PAK STMicroelectronics	570	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	725pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK HV	-40°C ~ 175°C
VS-60EPS08-M3 DIODE GP 800V 60A TO247AC Vishay General Semiconductor - Diodes Division	2,185	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	800 V	60A	1.09 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-60EPS12-M3 DIODE GP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division	408	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	1.09 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
FFSB2065BDN-F085 DIODE SIC 650V 23.6A D2PAK-3 onsemi	659	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	23.6A	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C

Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

Does EGOO support BOM and small-batch sourcing?

Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

How do I request pricing and availability?

Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.