REFINED COMPONENT RESULTS

Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
S4JH Taiwan Semiconductor Corporation

S4JH

4A, 600V, STANDARD RECOVERY RECT

Taiwan Semiconductor Corporation

2,800 -
Datasheet - DO-214AB, SMC Tape & Reel (TR) Active Standard 600 V 4A 1.15 V @ 4 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 600 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
PU6JC Taiwan Semiconductor Corporation

PU6JC

25NS, 6A, 600V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation

2,735 -
Datasheet - DO-214AB, SMC Tape & Reel (TR) Active Standard 600 V 6A 1.7 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 2 µA @ 600 V 48pF @ 4V, 1MHz - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S4DH Taiwan Semiconductor Corporation

S4DH

4A, 200V, STANDARD RECOVERY RECT

Taiwan Semiconductor Corporation

2,550 -
Datasheet - DO-214AB, SMC Tape & Reel (TR) Active Standard 200 V 4A 1.15 V @ 4 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 200 V 60pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S4J Taiwan Semiconductor Corporation

S4J

DIODE GEN PURP 600V 4A DO214AB

Taiwan Semiconductor Corporation

2,001 -
Datasheet - DO-214AB, SMC Tape & Reel (TR) Active Standard 600 V 4A - Standard Recovery >500ns, > 200mA (Io) 1.5 µs 100 µA @ 600 V 60pF @ 4V, 1MHz - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
SK510BH Taiwan Semiconductor Corporation

SK510BH

DIODE SCHOTTKY 100V 5A DO214AA

Taiwan Semiconductor Corporation

5,215 -
Datasheet - DO-214AA, SMB Tape & Reel (TR) Active Schottky 100 V 5A 850 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - Automotive AEC-Q101 Surface Mount DO-214AA (SMB) -55°C ~ 150°C
PUAD4B Taiwan Semiconductor Corporation

PUAD4B

25NS, 4A, 100V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation

4,500 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 100 V 4A 920 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 100 V 77pF @ 4V, 1MHz - - Surface Mount ThinDPAK -55°C ~ 175°C
MBRAD8100H Taiwan Semiconductor Corporation

MBRAD8100H

8A, 100V, SCHOTTKY RECTIFIER

Taiwan Semiconductor Corporation

4,495 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 100 V 8A 850 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 100 V 198pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount ThinDPAK -55°C ~ 150°C
MBRAD860H Taiwan Semiconductor Corporation

MBRAD860H

8A, 60V, SCHOTTKY RECTIFIER

Taiwan Semiconductor Corporation

4,489 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 60 V 8A 750 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 60 V 253pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount ThinDPAK -55°C ~ 150°C
PUAD4D Taiwan Semiconductor Corporation

PUAD4D

25NS, 4A, 200V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation

4,480 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 200 V 4A 920 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 200 V 77pF @ 4V, 1MHz - - Surface Mount ThinDPAK -55°C ~ 175°C
6A80G Taiwan Semiconductor Corporation

6A80G

DIODE GEN PURP 800V 6A R-6

Taiwan Semiconductor Corporation

2,307 -
Datasheet - R-6, Axial Tape & Reel (TR) Not For New Designs Standard 800 V 6A 1 V @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 60pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
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