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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
HER108G B0G Taiwan Semiconductor Corporation

HER108G B0G

DIODE GEN PURP 1A DO204AL

Taiwan Semiconductor Corporation

9,110 -
Datasheet - DO-204AL, DO-41, Axial Bulk Active Standard 1000 V 1A 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 1000 V 10pF @ 4V, 1MHz - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
HER153G B0G Taiwan Semiconductor Corporation

HER153G B0G

DIODE GEN PURP 200V 1.5A DO204AC

Taiwan Semiconductor Corporation

3,448 -
Datasheet - DO-204AC, DO-15, Axial Bulk Active Standard 200 V 1.5A 1 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V 35pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
HER156G B0G Taiwan Semiconductor Corporation

HER156G B0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation

3,913 -
Datasheet - DO-204AC, DO-15, Axial Bulk Active Standard 600 V 1.5A 1 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 600 V 20pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
HER208G B0G Taiwan Semiconductor Corporation

HER208G B0G

DIODE GEN PURP 2A DO204AC

Taiwan Semiconductor Corporation

7,220 -
Datasheet - DO-204AC, DO-15, Axial Bulk Discontinued at Digi-Key Standard 1000 V 2A 1.7 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 1000 V 20pF @ 4V, 1MHz - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
HER302G B0G Taiwan Semiconductor Corporation

HER302G B0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

6,363 -
Datasheet - DO-201AD, Axial Bulk Active Standard 100 V 3A 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 60pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
HER308G B0G Taiwan Semiconductor Corporation

HER308G B0G

DIODE GEN PURP 3A DO201AD

Taiwan Semiconductor Corporation

8,157 -
Datasheet - DO-201AD, Axial Bulk Active Standard 1000 V 3A 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 1000 V 35pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 150°C
HER602G B0G Taiwan Semiconductor Corporation

HER602G B0G

DIODE GEN PURP 100V 6A R-6

Taiwan Semiconductor Corporation

3,693 -
Datasheet - R-6, Axial Bulk Discontinued at Digi-Key Standard 100 V 6A 1 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 80pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
HER605G B0G Taiwan Semiconductor Corporation

HER605G B0G

DIODE GEN PURP 400V 6A R-6

Taiwan Semiconductor Corporation

7,995 -
Datasheet - R-6, Axial Bulk Active Standard 400 V 6A 1.3 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 80pF @ 4V, 1MHz - - Through Hole R-6 -55°C ~ 150°C
MUR420HB0G Taiwan Semiconductor Corporation

MUR420HB0G

DIODE GEN PURP 200V 4A DO201AD

Taiwan Semiconductor Corporation

2,898 -
Datasheet - DO-201AD, Axial Bulk Active Standard 200 V 4A 890 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 200 V 65pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole DO-201AD -55°C ~ 175°C
MUR440 B0G Taiwan Semiconductor Corporation

MUR440 B0G

DIODE GEN PURP 400V 4A DO201AD

Taiwan Semiconductor Corporation

4,504 -
Datasheet - DO-201AD, Axial Bulk Active Standard 400 V 4A 1.28 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 65pF @ 4V, 1MHz - - Through Hole DO-201AD -55°C ~ 175°C
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Single Diodes FAQ

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