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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-30EPF06-M3 Vishay General Semiconductor - Diodes Division

VS-30EPF06-M3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

500 -
Datasheet - TO-247-2 Tube Active Standard 600 V 30A 1.41 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 600 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
VS-HFA25PB60-N3 Vishay General Semiconductor - Diodes Division

VS-HFA25PB60-N3

DIODE GP 600V 25A TO247AC

Vishay General Semiconductor - Diodes Division

385 -
Datasheet HEXFRED® TO-247-2 Tube Active Standard 600 V 25A 1.7 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 20 µA @ 600 V - - - Through Hole TO-247AC Modified -55°C ~ 150°C
VS-40EPF12-M3 Vishay General Semiconductor - Diodes Division

VS-40EPF12-M3

DIODE GP 1.2KV 40A TO247AC

Vishay General Semiconductor - Diodes Division

231 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 40A 1.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1200 V - - - Through Hole TO-247AC Modified -40°C ~ 150°C
VS-HFA08PB120-N3 Vishay General Semiconductor - Diodes Division

VS-HFA08PB120-N3

DIODE GP 1.2KV 8A TO247AC

Vishay General Semiconductor - Diodes Division

500 -
Datasheet HEXFRED® TO-247-2 Tube Active Standard 1200 V 8A 3.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 10 µA @ 1200 V - - - Through Hole TO-247AC Modified -55°C ~ 150°C
VS-25FR40 Vishay General Semiconductor - Diodes Division

VS-25FR40

DIODE GEN PURP 400V 25A DO203AA

Vishay General Semiconductor - Diodes Division

101 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 25A 1.3 V @ 78 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-60APU02-N3 Vishay General Semiconductor - Diodes Division

VS-60APU02-N3

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division

438 -
Datasheet FRED Pt® TO-247-3 Tube Active Standard 200 V 60A 1.08 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 28 ns 50 µA @ 200 V - - - Through Hole TO-247AC -55°C ~ 175°C
VS-65EPF12LHM3 Vishay General Semiconductor - Diodes Division

VS-65EPF12LHM3

DIODE GEN PURP 1.2KV 65A TO247AD

Vishay General Semiconductor - Diodes Division

140 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 65A 1.42 V @ 65 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - Automotive AEC-Q101 Through Hole TO-247AD -40°C ~ 150°C
VS-40HF10 Vishay General Semiconductor - Diodes Division

VS-40HF10

DIODE GEN PURP 100V 40A DO203AB

Vishay General Semiconductor - Diodes Division

102 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard 100 V 40A 1.3 V @ 125 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 100 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
VS-1N3890R Vishay General Semiconductor - Diodes Division

VS-1N3890R

DIODE GEN PURP 100V 12A DO203AA

Vishay General Semiconductor - Diodes Division

181 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 12A 1.4 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 25 µA @ 100 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
VS-3C20ET07T-M3 Vishay General Semiconductor - Diodes Division

VS-3C20ET07T-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

788 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 20A 1.5 V @ 20 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 845pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
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