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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VS-20ETF04STRL-M3 Vishay General Semiconductor - Diodes Division

VS-20ETF04STRL-M3

DIODE GEN PURP 400V 20A TO263AB

Vishay General Semiconductor - Diodes Division

7,894 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 400 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 400 V - - - Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
VS-35EPF06L-M3 Vishay General Semiconductor - Diodes Division

VS-35EPF06L-M3

DIODE GEN PURP 600V 35A TO247AD

Vishay General Semiconductor - Diodes Division

496 -
Datasheet - TO-247-2 Tube Active Standard 600 V 35A 1.46 V @ 35 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 100 µA @ 600 V - - - Through Hole TO-247AD -40°C ~ 150°C
VS-65APS16L-M3 Vishay General Semiconductor - Diodes Division

VS-65APS16L-M3

DIODE GEN PURP 1.6KV 65A TO247AD

Vishay General Semiconductor - Diodes Division

495 -
Datasheet - TO-247-3 Tube Active Standard 1600 V 65A 1.17 V @ 65 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 150°C
VS-3C10EV07T-M3/I Vishay General Semiconductor - Diodes Division

VS-3C10EV07T-M3/I

SIC-G3-SLIMDPAK 2L

Vishay General Semiconductor - Diodes Division

4,391 -
Datasheet eSMP® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 445pF @ 1V, 1MHz - - Surface Mount SlimDPAK -55°C ~ 175°C
VS-3C05ET12T-M3 Vishay General Semiconductor - Diodes Division

VS-3C05ET12T-M3

5A 1200V SIC ZERO QRR SINGLE TJM

Vishay General Semiconductor - Diodes Division

939 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.5 V @ 5 A No Recovery Time > 500mA (Io) - 30 µA @ 1200 V 20pF @ 800V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
VS-ETU3006STRLHM3 Vishay General Semiconductor - Diodes Division

VS-ETU3006STRLHM3

DIODE GEN PURP 600V 30A TO263AB

Vishay General Semiconductor - Diodes Division

208 -
Datasheet FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
VS-HFA08PB60-N3 Vishay General Semiconductor - Diodes Division

VS-HFA08PB60-N3

DIODE GP 600V 8A TO247AC

Vishay General Semiconductor - Diodes Division

250 -
Datasheet HEXFRED® TO-247-2 Tube Active Standard 600 V 8A 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 5 µA @ 600 V - - - Through Hole TO-247AC Modified -55°C ~ 150°C
VS-65EPS16L-M3 Vishay General Semiconductor - Diodes Division

VS-65EPS16L-M3

DIODE GEN PURP 1.6KV 65A TO247AD

Vishay General Semiconductor - Diodes Division

184 -
Datasheet - TO-247-2 Tube Active Standard 1600 V 65A 1.17 V @ 65 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1600 V - - - Through Hole TO-247AD -40°C ~ 150°C
VS-3C05ET12S2L-M3 Vishay General Semiconductor - Diodes Division

VS-3C05ET12S2L-M3

5A 1200V SIC ZERO QRR SINGLE TJM

Vishay General Semiconductor - Diodes Division

796 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.5 V @ 5 A No Recovery Time > 500mA (Io) - 30 µA @ 1200 V 20pF @ 800V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-65EPF12L-M3 Vishay General Semiconductor - Diodes Division

VS-65EPF12L-M3

DIODE GEN PURP 1.2KV 65A TO247AD

Vishay General Semiconductor - Diodes Division

480 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 65A 1.42 V @ 65 A Fast Recovery =< 500ns, > 200mA (Io) 480 ns 100 µA @ 1200 V - - - Through Hole TO-247AD -40°C ~ 150°C
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Single Diodes FAQ

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