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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
BYX83TAP Vishay General Semiconductor - Diodes Division

BYX83TAP

DIODE AVALANCHE 400V 2A SOD57

Vishay General Semiconductor - Diodes Division

2,831 -
Datasheet - SOD-57, Axial Tape & Box (TB) Active Avalanche 400 V 2A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 4 µs 1 µA @ 400 V 20pF @ 4V, 1MHz - - Through Hole SOD-57 -55°C ~ 175°C
BY527TR Vishay General Semiconductor - Diodes Division

BY527TR

DIODE AVALANCHE 800V 2A SOD57

Vishay General Semiconductor - Diodes Division

3,588 -
Datasheet - SOD-57, Axial Tape & Reel (TR) Active Avalanche 800 V 2A 1.65 V @ 10 A Standard Recovery >500ns, > 200mA (Io) 4 µs 1 µA @ 800 V 16pF @ 4V, 1MHz - - Through Hole SOD-57 -55°C ~ 175°C
BYT52A-TR Vishay General Semiconductor - Diodes Division

BYT52A-TR

DIODE AVALANCHE 50V 1.4A SOD57

Vishay General Semiconductor - Diodes Division

7,448 -
Datasheet - SOD-57, Axial Tape & Reel (TR) Active Avalanche 50 V 1.4A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 50 V - - - Through Hole SOD-57 -55°C ~ 175°C
BYT52B-TR Vishay General Semiconductor - Diodes Division

BYT52B-TR

DIODE AVALANCHE 100V 1.4A SOD57

Vishay General Semiconductor - Diodes Division

8,475 -
Datasheet - SOD-57, Axial Tape & Reel (TR) Active Avalanche 100 V 1.4A 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 100 V - - - Through Hole SOD-57 -55°C ~ 175°C
BYT54A-TR Vishay General Semiconductor - Diodes Division

BYT54A-TR

DIODE AVALANCHE 50V 1.25A SOD57

Vishay General Semiconductor - Diodes Division

2,032 -
Datasheet - SOD-57, Axial Tape & Reel (TR) Active Avalanche 50 V 1.25A 1.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 5 µA @ 50 V - - - Through Hole SOD-57 -55°C ~ 175°C
BYT54B-TR Vishay General Semiconductor - Diodes Division

BYT54B-TR

DIODE AVALANCHE 100V 1.25A SOD57

Vishay General Semiconductor - Diodes Division

6,737 -
Datasheet - SOD-57, Axial Tape & Reel (TR) Active Avalanche 100 V 1.25A 1.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 5 µA @ 100 V - - - Through Hole SOD-57 -55°C ~ 175°C
BYV12-TR Vishay General Semiconductor - Diodes Division

BYV12-TR

DIODE AVALANCHE 100V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

9,587 -
Datasheet - SOD-57, Axial Tape & Reel (TR) Active Avalanche 100 V 1.5A 1.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 5 µA @ 100 V - - - Through Hole SOD-57 -55°C ~ 175°C
BYV26A-TR Vishay General Semiconductor - Diodes Division

BYV26A-TR

DIODE AVALANCHE 200V 1A SOD57

Vishay General Semiconductor - Diodes Division

9,727 -
Datasheet - SOD-57, Axial Tape & Reel (TR) Active Avalanche 200 V 1A 2.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 200 V - - - Through Hole SOD-57 -55°C ~ 175°C
BYV37-TR Vishay General Semiconductor - Diodes Division

BYV37-TR

DIODE AVALANCHE 800V 2A SOD57

Vishay General Semiconductor - Diodes Division

9,873 -
Datasheet - SOD-57, Axial Tape & Reel (TR) Active Avalanche 800 V 2A 1.1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 5 µA @ 800 V - - - Through Hole SOD-57 -55°C ~ 175°C
BYX83TR Vishay General Semiconductor - Diodes Division

BYX83TR

DIODE AVALANCHE 400V 2A SOD57

Vishay General Semiconductor - Diodes Division

2,186 -
Datasheet - SOD-57, Axial Tape & Reel (TR) Active Avalanche 400 V 2A 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 4 µs 1 µA @ 400 V 20pF @ 4V, 1MHz - - Through Hole SOD-57 -55°C ~ 175°C
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