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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
BYT79-600,127 WeEn Semiconductors

BYT79-600,127

DIODE GEN PURP 600V 15A TO220AC

WeEn Semiconductors

3,965 -
Datasheet - TO-220-2 Tube Active Standard 600 V 15A 1.38 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 50 µA @ 600 V - - - Through Hole TO-220AC 150°C (Max)
BYC20X-600,127 WeEn Semiconductors

BYC20X-600,127

DIODE GEN PURP 500V 20A TO220FP

WeEn Semiconductors

3,733 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 500 V 20A 2.9 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 200 µA @ 600 V - - - Through Hole TO-220FP 150°C (Max)
WNSC2D04650DJ WeEn Semiconductors

WNSC2D04650DJ

DIODE SIL CARBIDE 650V 4A DPAK

WeEn Semiconductors

4,987 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 125pF @ 1V, 1MHz - - Surface Mount DPAK 175°C
WNSC2D04650XQ WeEn Semiconductors

WNSC2D04650XQ

DIODE SIL CARBIDE 650V 4A TO220F

WeEn Semiconductors

2,756 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 125pF @ 1V, 1MHz - - Through Hole TO-220F 175°C
WNSC2D04650TJ WeEn Semiconductors

WNSC2D04650TJ

DIODE SIL CARBIDE 650V 4A 5DFN

WeEn Semiconductors

10,523 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 125pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C
WND35P12BJ WeEn Semiconductors

WND35P12BJ

DIODE GEN PURP 1.2KV 35A D2PAK

WeEn Semiconductors

1,799 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 35A 1.4 V @ 35 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1200 V - - - Surface Mount D2PAK -40°C ~ 150°C
WNSC2D06650TJ WeEn Semiconductors

WNSC2D06650TJ

DIODE SIL CARBIDE 650V 6A 5DFN

WeEn Semiconductors

2,024 -
Datasheet - 4-VSFN Exposed Pad Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 198pF @ 1V, 1MHz - - Surface Mount 5-DFN (8x8) 175°C
BYV30JT-600PQ WeEn Semiconductors

BYV30JT-600PQ

DIODE GEN PURP 600V 30A TO3P

WeEn Semiconductors

3,840 -
Datasheet - TO-3P-3, SC-65-3 Tube Active Standard 600 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 10 µA @ 600 V - - - Through Hole TO-3P 175°C (Max)
BYC30X-600P,127 WeEn Semiconductors

BYC30X-600P,127

DIODE GEN PURP 600V 30A TO220FP

WeEn Semiconductors

9,203 -
Datasheet - TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 30A 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V - - - Through Hole TO-220FP 175°C (Max)
WNSC2D03650MBJ WeEn Semiconductors

WNSC2D03650MBJ

DIODE SIL CARBIDE 650V 3A SMB

WeEn Semiconductors

5,409 -
Datasheet - DO-214AA, SMB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 3A 1.7 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 130pF @ 1V, 1MHz - - Surface Mount SMB 175°C
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Single Diodes FAQ

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