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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
CUS06(TE85L,Q,M) Toshiba Semiconductor and Storage

CUS06(TE85L,Q,M)

DIODE SCHOTTKY 20V 1A US-FLAT

Toshiba Semiconductor and Storage

8,141 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 20 V 1A 450 mV @ 700 mA Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 20 V 40pF @ 10V, 1MHz - - Surface Mount US-FLAT (1.25x2.5) -40°C ~ 150°C
CUS10I30A(TE85L,QM Toshiba Semiconductor and Storage

CUS10I30A(TE85L,QM

DIODE SCHOTTKY 30V 1A US-FLAT

Toshiba Semiconductor and Storage

7,187 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 30 V 1A 390 mV @ 700 mA Fast Recovery =< 500ns, > 200mA (Io) - 60 µA @ 30 V 50pF @ 10V, 1MHz - - Surface Mount US-FLAT (1.25x2.5) 150°C (Max)
CUS10I40A(TE85L,QM Toshiba Semiconductor and Storage

CUS10I40A(TE85L,QM

DIODE SCHOTTKY 40V 1A US-FLAT

Toshiba Semiconductor and Storage

9,512 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 40 V 1A 490 mV @ 700 mA Fast Recovery =< 500ns, > 200mA (Io) - 60 µA @ 40 V 35pF @ 10V, 1MHz - - Surface Mount US-FLAT (1.25x2.5) 150°C (Max)
CUS15I30A(TE85L,QM Toshiba Semiconductor and Storage

CUS15I30A(TE85L,QM

DIODE SCHOTTKY 30V 1.5A US-FLAT

Toshiba Semiconductor and Storage

8,002 -
Datasheet - SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 30 V 1.5A 460 mV @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) - 60 µA @ 30 V 50pF @ 10V, 1MHz - - Surface Mount US-FLAT (1.25x2.5) 150°C (Max)
CRG09A,LQ(M Toshiba Semiconductor and Storage

CRG09A,LQ(M

DIODE GEN PURP 400V 1A S-FLAT

Toshiba Semiconductor and Storage

6,198 -
Datasheet - SOD-123F Tape & Reel (TR) Active Standard 400 V 1A 1.1 V @ 700 mA Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V - - - Surface Mount S-FLAT (1.6x3.5) 150°C (Max)
DSF01S30SC,L3F Toshiba Semiconductor and Storage

DSF01S30SC,L3F

DIODE SCHOTTKY 30V 100MA SC2

Toshiba Semiconductor and Storage

6,165 -
Datasheet - 0201 (0603 Metric) Tape & Reel (TR) Obsolete Schottky 30 V 100mA 500 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed - 50 µA @ 30 V 9.3pF @ 0V, 1MHz - - Surface Mount SC2 125°C (Max)
CMF01A,LQ(M Toshiba Semiconductor and Storage

CMF01A,LQ(M

DIODE GEN PURP 600V 2A M-FLAT

Toshiba Semiconductor and Storage

8,824 -
Datasheet - SOD-128 Box Active Standard 600 V 2A 2 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 600 V - - - Surface Mount M-FLAT (2.4x3.8) 150°C
CMF02A,LQ(M Toshiba Semiconductor and Storage

CMF02A,LQ(M

DIODE GEN PURP 600V 1A M-FLAT

Toshiba Semiconductor and Storage

5,586 -
Datasheet - SOD-128 Box Active Standard 600 V 1A 2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 600 V - - - Surface Mount M-FLAT (2.4x3.8) 150°C
CMG03A,LQ(M Toshiba Semiconductor and Storage

CMG03A,LQ(M

DIODE GEN PURP 600V 2A M-FLAT

Toshiba Semiconductor and Storage

7,459 -
Datasheet - SOD-128 Box Active Standard 600 V 2A 1.1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - - - Surface Mount M-FLAT (2.4x3.8) 150°C
CMG06A,LQ(M Toshiba Semiconductor and Storage

CMG06A,LQ(M

DIODE GEN PURP 600V 1A M-FLAT

Toshiba Semiconductor and Storage

2,536 -
Datasheet - SOD-128 Box Active Standard 600 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - - - Surface Mount M-FLAT (2.4x3.8) 150°C
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