PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
CMR3U-10M TR13 PBFREE Central Semiconductor Corp

CMR3U-10M TR13 PBFREE

DIODE GEN PURP 1KV 3A SMC

Central Semiconductor Corp

9,176 -
Datasheet - DO-214AB, SMC Tape & Reel (TR) Active Standard 1000 V 3A 2 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 5 µA @ 1000 V - - - Surface Mount SMC -65°C ~ 175°C
VS-8EWF06S-M3 Vishay General Semiconductor - Diodes Division

VS-8EWF06S-M3

DIODE GEN PURP 600V 8A DPAK

Vishay General Semiconductor - Diodes Division

2,573 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 600 V 8A 1.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 100 µA @ 600 V - - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
C3D04060A Wolfspeed, Inc.

C3D04060A

DIODE SIL CARB 600V 13.5A TO220

Wolfspeed, Inc.

5,109 -
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 13.5A 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 251pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
APT75DQ60BG Microchip Technology

APT75DQ60BG

DIODE GP 600V 75A TO247

Microchip Technology

22,922 -
Datasheet - TO-247-2 Tube Active Standard 600 V 75A 2.5 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 31 ns 25 µA @ 600 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
JANTXV1N4148UR-1 Microchip Technology

JANTXV1N4148UR-1

DIODE GEN PURP 75V 200MA DO213AA

Microchip Technology

7,199 -
Datasheet - DO-213AA Bulk Active Standard 75 V 200mA 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 25 nA @ 20 V 4pF @ 0V, 1MHz Military MIL-PRF-19500/116 Surface Mount DO-213AA -65°C ~ 175°C
C4D02120E-TR Wolfspeed, Inc.

C4D02120E-TR

DIODE SIL CARB 1.2KV 10A TO252-2

Wolfspeed, Inc.

11,748 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 167pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
C4D02120E Wolfspeed, Inc.

C4D02120E

DIODE SIL CARB 1.2KV 10A TO252-2

Wolfspeed, Inc.

10,786 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.8 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 167pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
STPSC6H065B-TR STMicroelectronics

STPSC6H065B-TR

DIODE SIL CARBIDE 650V 6A DPAK

STMicroelectronics

5,633 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 0V, 1MHz - - Surface Mount DPAK -40°C ~ 175°C
DSEI12-12A IXYS

DSEI12-12A

DIODE GEN PURP 1.2KV 11A TO220AC

IXYS

3,847 -
Datasheet - TO-220-2 Tube Active Standard 1200 V 11A 2.6 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 250 µA @ 1200 V - - - Through Hole TO-220AC -40°C ~ 150°C
STTH30L06G-TR STMicroelectronics

STTH30L06G-TR

DIODE GEN PURP 600V 30A D2PAK

STMicroelectronics

3,910 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 1.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 90 ns 25 µA @ 600 V - - - Surface Mount D2PAK 175°C (Max)
STPSC2H12B2Y-TR STMicroelectronics

STPSC2H12B2Y-TR

DIODE SIL CARBIDE 1.2KV 5A DPAK

STMicroelectronics

12,015 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.5 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 12 µA @ 1200 V 190pF @ 0V, 1MHz - - Surface Mount DPAK -40°C ~ 175°C
GB02SLT12-214 GeneSiC Semiconductor

GB02SLT12-214

DIODE SIL CARB 1.2KV 2A DO214AA

GeneSiC Semiconductor

12,092 -
Datasheet SiC Schottky MPS™ DO-214AA, SMB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 2A 1.8 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 1200 V 131pF @ 1V, 1MHz - - Surface Mount DO-214AA -55°C ~ 175°C
DST2045AX Littelfuse Inc.

DST2045AX

DIODE SCHOTTKY 45V 20A P600

Littelfuse Inc.

19,025 -
Datasheet - P600, Axial Tape & Reel (TR) Active Schottky 45 V 20A 580 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 1.2 mA @ 45 V - - - Through Hole P600 -55°C ~ 155°C
DSI30-12AS-TRL IXYS

DSI30-12AS-TRL

DIODE GEN PURP 1.2KV 30A TO263AA

IXYS

8,015 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1200 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
VS-E5TH3012-M3 Vishay General Semiconductor - Diodes Division

VS-E5TH3012-M3

DIODE GEN PURP 1.2KV 30A TO220AC

Vishay General Semiconductor - Diodes Division

5,292 -
Datasheet FRED Pt® TO-220-2 Tube Active Standard 1200 V 30A 2.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 58 ns 50 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
APT75DQ120BG Microchip Technology

APT75DQ120BG

DIODE GP 1.2KV 75A TO247

Microchip Technology

3,293 -
Datasheet - TO-247-2 Tube Active Standard 1200 V 75A 3.1 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 325 ns 100 µA @ 1200 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
VS-20ETS12FP-M3 Vishay General Semiconductor - Diodes Division

VS-20ETS12FP-M3

DIODE GP 1.2KV 20A TO220-2FP

Vishay General Semiconductor - Diodes Division

1,182 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 1200 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 100 µA @ 1200 V - - - Through Hole TO-220-2 Full Pack -40°C ~ 150°C
APT60D60BG Microchip Technology

APT60D60BG

DIODE GP 600V 60A TO247

Microchip Technology

1,014 -
Datasheet - TO-247-2 Tube Active Standard 600 V 60A 1.8 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 130 ns 250 µA @ 600 V - - - Through Hole TO-247 [B] -55°C ~ 175°C
VS-20ETF12-M3 Vishay General Semiconductor - Diodes Division

VS-20ETF12-M3

DIODE GEN PURP 1.2KV 20A TO220AC

Vishay General Semiconductor - Diodes Division

7,985 -
Datasheet - TO-220-2 Tube Active Standard 1200 V 20A 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - - - Through Hole TO-220AC -40°C ~ 150°C
C3D06060A Wolfspeed, Inc.

C3D06060A

DIODE SIL CARB 600V 19A TO220-2

Wolfspeed, Inc.

3,162 -
Datasheet Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 19A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 294pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
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Single Diodes FAQ

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