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Single Diodes

Compare the current Single Diodes Rectifiers selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
BSDH06G65E2 Bourns Inc.

BSDH06G65E2

DIODE SCHOT SIC 650V 6A TO220-2

Bourns Inc.

3,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 201pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
BSDH10G65E2 Bourns Inc.

BSDH10G65E2

DIODE SIC 650V 10A TO220-2

Bourns Inc.

2,873 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 650 V 323pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
BSDH08G65E2 Bourns Inc.

BSDH08G65E2

DIODE SCHOT SIC 650V 8A TO220-2

Bourns Inc.

3,000 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 267pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
BSDD06G65E2 Bourns Inc.

BSDD06G65E2

DIODE SIC 650V 6A TO252

Bourns Inc.

4,963 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 650 V 201pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
BSDD08G65E2 Bourns Inc.

BSDD08G65E2

DIODE SCHOT SIC 650V 8A TO252

Bourns Inc.

5,000 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 8A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 267pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
BSDD05G120E2 Bourns Inc.

BSDD05G120E2

DIODE SCHOT SIC 1200V 5A TO252

Bourns Inc.

4,994 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.6 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 25 µA @ 1200 V 260pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
BSDH10S65E6 Bourns Inc.

BSDH10S65E6

DIODE SCHOT SIC 650V 10A TO220-2

Bourns Inc.

2,966 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 500pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
BSDD10G65E2 Bourns Inc.

BSDD10G65E2

DIODE SCHOT SIC 650V 10A TO252

Bourns Inc.

9,660 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 323pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
BSDH10G120E2 Bourns Inc.

BSDH10G120E2

DIODE SIC 1200V 10A TO220-2

Bourns Inc.

2,929 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 1200 V 481pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
BSDD10S65E6 Bourns Inc.

BSDD10S65E6

DIODE SCHOT SIC 650V 10A TO252

Bourns Inc.

4,995 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 10A 1.45 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 500pF @ 1V, 1MHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
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