PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
C4D10120E-TR Wolfspeed, Inc.

C4D10120E-TR

DIODE SIL CARB 1.2KV 33A TO252-2

Wolfspeed, Inc.

3,806 -
Datasheet Z-Rec® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 33A 1.8 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 250 µA @ 1200 V 754pF @ 0V, 1MHz - - Surface Mount TO-252-2 -55°C ~ 175°C
DSDI60-18A IXYS

DSDI60-18A

DIODE GEN PURP 1.8KV 63A TO247AD

IXYS

2,767 -
Datasheet - TO-247-2 Tube Active Standard 1800 V 63A 4.1 V @ 70 A Fast Recovery =< 500ns, > 200mA (Io) 300 ns 2 mA @ 1800 V - - - Through Hole TO-247AD -40°C ~ 150°C
IDWD30G120C5XKSA1 Infineon Technologies

IDWD30G120C5XKSA1

DIODE SIL CARB 1.2KV 87A TO247-2

Infineon Technologies

652 -
Datasheet CoolSiC™+ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 87A 1.65 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 248 µA @ 1200 V 1980pF @ 1V, 1MHz - - Through Hole PG-TO247-2 -55°C ~ 175°C
UJ3D1725K2 Qorvo

UJ3D1725K2

DIODE SIL CARB 1.7KV 25A TO247-2

Qorvo

4,349 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 25A 1.7 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 360 µA @ 1700 V 1500pF @ 1V, 1MHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
IDWD40G120C5XKSA1 Infineon Technologies

IDWD40G120C5XKSA1

DIODE SIL CARB 1.2KV 110A TO247

Infineon Technologies

132 -
Datasheet CoolSiC™+ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 110A 1.65 V @ 40 A No Recovery Time > 500mA (Io) 0 ns 332 µA @ 1200 V 2592pF @ 1V, 1MHz - - Through Hole PG-TO247-2 -55°C ~ 175°C
FFSH5065B-F085 onsemi

FFSH5065B-F085

DIODE SIL CARB 650V 50A TO247-2

onsemi

331 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 50A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 2030pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
NDSH25170A onsemi

NDSH25170A

DIODE SIL CARB 1.7KV 25A TO247-2

onsemi

849 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 25A 1.75 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1700 V 2025pF @ 1V, 100kHz - - Through Hole TO-247-2 -55°C ~ 175°C
GD25MPS17H GeneSiC Semiconductor

GD25MPS17H

DIODE SIL CARB 1.7KV 56A TO247-2

GeneSiC Semiconductor

1,285 -
Datasheet SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 56A 1.8 V @ 25 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1700 V 1083pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
C6D10170H Wolfspeed, Inc.

C6D10170H

10A 1700V SIC, SCHOTTKY DIODE

Wolfspeed, Inc.

395 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1700 V 40A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 18 µA @ 1700 V 1227pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
JANTXV1N5819UR-1 Microchip Technology

JANTXV1N5819UR-1

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology

124 -
Datasheet - DO-213AB, MELF (Glass) Bag Active Schottky 45 V 1A 490 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 45 V 70pF @ 5V, 1MHz Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
UJ3D1250K2 Qorvo

UJ3D1250K2

DIODE SIL CARB 1.2KV 50A TO247-2

Qorvo

14,813 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 50A 1.7 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 400 µA @ 1200 V 2340pF @ 1V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
GC05MPS33J GeneSiC Semiconductor

GC05MPS33J

DIODE SIL CARB 3.3KV 5A TO263-7

GeneSiC Semiconductor

1,114 -
Datasheet SiC Schottky MPS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active SiC (Silicon Carbide) Schottky 3300 V 5A - No Recovery Time > 500mA (Io) 0 ns - - - - Surface Mount TO-263-7 175°C
C4D40120H Wolfspeed, Inc.

C4D40120H

DIODE SIL CARB 1.2KV 128A TO247

Wolfspeed, Inc.

764 -
Datasheet - TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 128A 1.8 V @ 40 A No Recovery Time > 500mA (Io) - 300 µA @ 1200 V 2809pF @ 0V, 1MHz - - Through Hole TO-247-2 -55°C ~ 175°C
DMA150E1600NA IXYS

DMA150E1600NA

DIODE GP 1.6KV 150A SOT227B

IXYS

187 -
Datasheet - SOT-227-4, miniBLOC Tube Active Standard 1600 V 150A 1.15 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 200 µA @ 1600 V 60pF @ 400V, 1MHz - - Chassis Mount SOT-227B -40°C ~ 150°C
1N6391 Microchip Technology

1N6391

DIODE SCHOTTKY 45V 25A DO203AA

Microchip Technology

74 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Schottky 45 V 25A 500 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 45 V 2000pF @ 5V, 1MHz - - Stud Mount DO-203AA (DO-4) -55°C ~ 175°C
JANTX1N5822US Microchip Technology

JANTX1N5822US

DIODE SCHOTTKY 40V 3A B SQ-MELF

Microchip Technology

169 -
Datasheet - SQ-MELF, B Bulk Active Schottky 40 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - - - Military MIL-PRF-19500/620 Surface Mount B, SQ-MELF -65°C ~ 150°C
S300Y GeneSiC Semiconductor

S300Y

DIODE GEN PURP 1.6KV 300A DO9

GeneSiC Semiconductor

54 -
Datasheet - DO-205AB, DO-9, Stud Bulk Active Standard 1600 V 300A 1.2 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V - - - Chassis, Stud Mount DO-9 -60°C ~ 180°C
UGE1112AY4 IXYS

UGE1112AY4

DIODE GEN PURP 8KV 4.2A UGE

IXYS

36 -
Datasheet - UGE Box Active Standard 8000 V 4.2A 6.25 V @ 7 A Standard Recovery >500ns, > 200mA (Io) - 1 mA @ 8000 V - - - Chassis Mount UGE -
1N5822US Microchip Technology

1N5822US

DIODE SCHOTTKY 40V 3A B SQ-MELF

Microchip Technology

207 -
Datasheet - SQ-MELF, B Bulk Active Schottky 40 V 3A 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - - - Surface Mount B, SQ-MELF -65°C ~ 125°C
MEO550-02DA IXYS

MEO550-02DA

DIODE GEN PURP 200V 582A Y4-M6

IXYS

143 -
Datasheet - Y4-M6 Bulk Active Standard 200 V 582A 1.25 V @ 520 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 mA @ 200 V - - - Chassis Mount Y4-M6 -40°C ~ 150°C
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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

Can EGOO help with hard-to-source or obsolete Single Diodes parts?

Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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