PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
VFT3080S-E3/4W Vishay General Semiconductor - Diodes Division

VFT3080S-E3/4W

DIODE SCHOTTKY 80V 30A TO220-3

Vishay General Semiconductor - Diodes Division

1,938 -
Datasheet - TO-220-3 Tube Active Schottky 80 V 30A 950 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V - - - Through Hole TO-220-3 -55°C ~ 150°C
MURB15120L-TP Micro Commercial Co

MURB15120L-TP

SUPER FAST RECOVERY RECTIFIER

Micro Commercial Co

1,510 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 1200 V 15A 3.2 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 5 µA @ 1200 V 55pF @ 4V, 1MHz - - Surface Mount D2PAK -55°C ~ 150°C
SFF2004G Taiwan Semiconductor Corporation

SFF2004G

DIODE GEN PURP 200V 20A ITO220AB

Taiwan Semiconductor Corporation

964 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active Standard 200 V 20A 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 90pF @ 4V, 1MHz - - Through Hole ITO-220AB -55°C ~ 150°C
SBR10U200P5-13D Diodes Incorporated

SBR10U200P5-13D

Super Barrier Rectifier PDI5 T&R

Diodes Incorporated

4,998 -
Datasheet - PowerDI™ 5 Tape & Reel (TR) Active Super Barrier 200 V 10A 880 mV @ 10 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 200 V - - - Surface Mount PowerDI™ 5 -65°C ~ 175°C
SFF2006GH Taiwan Semiconductor Corporation

SFF2006GH

DIODE GEN PURP 400V 20A ITO220AB

Taiwan Semiconductor Corporation

994 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active Standard 400 V 20A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 90pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AB -55°C ~ 150°C
SFF2006G Taiwan Semiconductor Corporation

SFF2006G

DIODE GEN PURP 400V 20A ITO220AB

Taiwan Semiconductor Corporation

940 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active Standard 400 V 20A 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 90pF @ 4V, 1MHz - - Through Hole ITO-220AB -55°C ~ 150°C
DSC06C065D1-13 Diodes Incorporated

DSC06C065D1-13

SILICON CARBIDE RECTIFIER TO252

Diodes Incorporated

2,490 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 170 µA @ 650 V 184pF @ 100mV, 1MHz - - Surface Mount TO-252 (Type WX) -55°C ~ 175°C
DSC04A065D1-13 Diodes Incorporated

DSC04A065D1-13

SILICON CARBIDE RECTIFIER TO252

Diodes Incorporated

2,465 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 4A 1.5 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) - 170 µA @ 650 V 184pF @ 100mV, 1MHz - - Surface Mount TO-252 (Type WX) -55°C ~ 175°C
SR1504 Taiwan Semiconductor Corporation

SR1504

DIODE SCHOTTKY 40V 15A R-6

Taiwan Semiconductor Corporation

1,465 -
Datasheet - R-6, Axial Tape & Reel (TR) Not For New Designs Schottky 40 V 15A 550 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - - - Through Hole R-6 -50°C ~ 150°C
SFAF1604G Taiwan Semiconductor Corporation

SFAF1604G

DIODE GEN PURP 200V 16A ITO220AC

Taiwan Semiconductor Corporation

998 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 200 V 16A 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 130pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
TRS2E65H,S1Q Toshiba Semiconductor and Storage

TRS2E65H,S1Q

G3 SIC-SBD 650V 2A TO-220-2L

Toshiba Semiconductor and Storage

335 -
Datasheet - TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 2A 1.35 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 135pF @ 1V, 1MHz - - Through Hole TO-220-2L 175°C
RFN6RSM2STFTL1 Rohm Semiconductor

RFN6RSM2STFTL1

200V 6A 14NS, TO-277A, ULTRA FAS

Rohm Semiconductor

4,000 -
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 200 V 6A 930 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 200 V - Automotive AEC-Q101 Surface Mount TO-277A 175°C
BYW76RAS15-10 Vishay General Semiconductor - Diodes Division

BYW76RAS15-10

DIODE AVALANCHE 600V 3A SOD64

Vishay General Semiconductor - Diodes Division

2,000 -
Datasheet - - Bulk Active Avalanche 600 V 3A 1.1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V - - - - - -55°C ~ 175°C
YQ10RSM10SDTL1 Rohm Semiconductor

YQ10RSM10SDTL1

TRENCH MOS STRUCTURE, 100V, 10A,

Rohm Semiconductor

3,945 -
Datasheet - TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 10A 670 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 80 µA @ 100 V - - - Surface Mount TO-277A 150°C
SFAF1608GH Taiwan Semiconductor Corporation

SFAF1608GH

DIODE GEN PURP 600V 16A ITO220AC

Taiwan Semiconductor Corporation

1,000 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 16A 1.7 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 100pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
SFAF1608G Taiwan Semiconductor Corporation

SFAF1608G

DIODE GEN PURP 600V 16A ITO220AC

Taiwan Semiconductor Corporation

991 -
Datasheet - TO-220-2 Full Pack Tube Active Standard 600 V 16A 1.7 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 100pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
RB078BM30SFHHTL Rohm Semiconductor

RB078BM30SFHHTL

30V 5A, TO-252, ULTRA LOW IR SBD

Rohm Semiconductor

2,500 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 30 V 5A 720 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 30 V - Automotive AEC-Q101 Surface Mount TO-252 175°C
SFS1604G Taiwan Semiconductor Corporation

SFS1604G

DIODE GEN PURP 200V 16A TO263AB

Taiwan Semiconductor Corporation

1,665 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 200 V 16A 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 80pF @ 4V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
SFS1604GH Taiwan Semiconductor Corporation

SFS1604GH

DIODE GEN PURP 200V 16A TO263AB

Taiwan Semiconductor Corporation

1,586 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 200 V 16A 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
P2000MTL Diotec Semiconductor

P2000MTL

DIODE GEN PURP 1000V 20A P600

Diotec Semiconductor

961 -
Datasheet - P600, Axial Cut Tape (CT) Active Standard 1000 V 20A 1.1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 1000 V - - - Through Hole P-600 -50°C ~ 175°C
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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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