Single Diodes
Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FT2000KADIODE GEN PURP 50V 20A TO220AC |
98,840 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | Standard | 50 V | 20A | 960 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 5 µA @ 50 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 150°C |
|
SBX2550DIODE SCHOTTKY 50V 25A P600 |
500 | - |
|
Datasheet | - | P600, Axial | Tape & Reel (TR) | Active | Schottky | 50 V | 25A | 570 mV @ 25 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 50 V | - | - | - | Through Hole | P600 | -50°C ~ 150°C |
|
KT20A150DIODE GEN PURP 150V 20A TO220AC |
1,050 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | Standard | 150 V | 20A | 980 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 150 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
KT20K150DIODE GEN PURP 150V 20A TO220AC |
433 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | Standard | 150 V | 20A | 980 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 150 V | - | - | - | Through Hole | TO-220AC | -50°C ~ 175°C |
|
ADC6D10065GDIODE SIL SIC 650V 36A TO263-2 |
1,000 | - |
|
Datasheet | WBG | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 36A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 650 V | 6.3pF @ 0V, 100kHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
IDH16S60CAKSA1DIODE SIL CARB 600V 16A TO220-2 |
12,385 | - |
|
Datasheet | CoolSiC™+ | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 600 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 650pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 175°C |
|
QSD50HCS120U1200v 50amp SiC Schottky Barrier |
1,000 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 149A | 1.7 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 2380000pF @ 0V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220-2L | -55°C ~ 175°C |
|
NC1D120C20KTNGSiC Schottky 1200V 20A TO247- 2L |
500 | - |
|
Datasheet | NC1D | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 1371pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
|
P2500YDIODE AVALANCHE 2KV 25A P600 |
8,000 | - |
|
Datasheet | - | P600, Axial | Tape & Reel (TR) | Active | Avalanche | 2000 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 2 V | - | - | - | Through Hole | P600 | -50°C ~ 175°C |
|
ADC3D10065IDIODE SIL SIC 1200V 10A TO220 |
550 | - |
|
Datasheet | - | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 2 µA @ 650 V | 6.3pF @ 200V, 100kHz | - | - | Through Hole | TO-220F | -40°C ~ 175°C |
|
QSD10HCS120USchottky barrier diode 1200v 10a |
1,600 | - |
|
Datasheet | - | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 37A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 770pF @ 0V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
NC1D120C30KTNGSiC Schottky 1200V 30A TO247- 2L |
300 | - |
|
Datasheet | NC1D | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 85 µA @ 1200 V | 2125pF @ 0.1V, 1MHz | - | - | Through Hole | TO-247-2L | -55°C ~ 175°C |
|
FFSH20120ASILICON CARBIDE SCHOTTKY DIODE |
900 | - |
|
Datasheet | - | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.75 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 1220pF @ 1V, 100KHz | - | - | Through Hole | TO-247-2 | - |
|
QSD25HCS170U1700v 25amp SiC Schottky Barrier |
1,233 | - |
|
Datasheet | - | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 94A | 1.9 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1700 V | 2822pF @ 0V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
NC1D120C40GTDNSiC Diode 1200V 40A Dual Die TO2 |
300 | - |
|
Datasheet | NC1D | TO-247-3L | Tube | Active | SiC (Silicon Carbide) Schottky | 1.2 kV | 40A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | - | 50 µA @ 1.2 kV | 1371pF @ 100mV, 1MHz | - | - | Through Hole | TO-247-3L | -55°C ~ 175°C |
|
NC1D120C60GTDNSiC Schottky 1200V 60A TO247- 3L |
300 | - |
|
Datasheet | - | TO-247-3L | Tube | Active | SiC (Silicon Carbide) Schottky | - | 60A | - | - | - | - | 2125pF @ 0.1V, 1MHz | - | - | Surface Mount | TO-247-3L | -55°C ~ 175°C |
|
ADC4D10120EDIODE SIL SIC 1200V 33A TO252-2 |
2,500 | - |
|
Datasheet | WBG | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 33A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 6.3pF @ 0V, 100kHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
ADC4D10120HDIODE SIL SIC 1200V 31.5A TO247- |
950 | - |
|
Datasheet | WBG | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 31.5A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | - | 2 µA @ 1200 V | 6.3pF @ 0V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
ADE4D20120GDIODE SIL SIC 1200V 56A TO263-2 |
600 | - |
|
Datasheet | WBG | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 56A | 1.85 V @ 20 A | No Recovery Time > 500mA (Io) | - | 20 µA @ 1200 V | 12pF @ 0V, 100kHz | - | - | Surface Mount | TO-263-2 | -55°C ~ 175°C |
|
ADC4D20120HDIODE SIL SIC 1200V 54A TO247-2 |
800 | - |
|
Datasheet | WBG | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 54A | 1.85 V @ 20 A | No Recovery Time > 500mA (Io) | - | 10 µA @ 1200 V | 12pF @ 0V, 100kHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
Single Diodes FAQ
What Single Diodes components can I source from EGOO?
You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.
Can EGOO help with hard-to-source or obsolete Single Diodes parts?
Yes. EGOO provides sourcing support for shortage, obsolete and hard-to-find electronic components. Send us the target manufacturer part number and quantity for checking.
Does EGOO support BOM and small-batch sourcing?
Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.
How do I request pricing and availability?
Submit the manufacturer part number, required quantity and any package, date-code or delivery requirements through the RFQ form, and our team will review available sourcing options.