PRODUCT DIRECTORY

Single Diodes

Browse available Single Diodes components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
DPF30I300PA IXYS

DPF30I300PA

DIODE GEN PURP 300V 30A TO220AC

IXYS

28 -
Datasheet HiPerFRED²™ TO-220-2 Tube Active Standard 300 V 30A 1.17 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 5 µA @ 300 V 42pF @ 150V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
STTH60R04W STMicroelectronics

STTH60R04W

DIODE GEN PURP 400V 60A DO247

STMicroelectronics

32 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 400 V 60A 1.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 60 µA @ 400 V - - - Through Hole DO-247 -40°C ~ 175°C
VS-16F20 Vishay General Semiconductor - Diodes Division

VS-16F20

DIODE GEN PURP 200V 16A DO203AA

Vishay General Semiconductor - Diodes Division

91 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 200 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
DNA30ER2200IY IXYS

DNA30ER2200IY

DIODE GEN PURP 2.2KV 30A TO262

IXYS

42 -
Datasheet - TO-262-2, I2PAK Tube Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Through Hole TO-262 (I2PAK) -55°C ~ 175°C
VS-16F40 Vishay General Semiconductor - Diodes Division

VS-16F40

DIODE GEN PURP 400V 16A DO203AA

Vishay General Semiconductor - Diodes Division

88 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 400 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-16FR10 Vishay General Semiconductor - Diodes Division

VS-16FR10

DIODE GEN PURP 100V 16A DO203AA

Vishay General Semiconductor - Diodes Division

31 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 100 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-1N1204A Vishay General Semiconductor - Diodes Division

VS-1N1204A

DIODE GEN PURP 400V 12A DO203AA

Vishay General Semiconductor - Diodes Division

80 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 400 V 12A 1.35 V @ 12 A Standard Recovery >500ns, > 200mA (Io) - 1.5 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 200°C
VS-12F20 Vishay General Semiconductor - Diodes Division

VS-12F20

DIODE GEN PURP 200V 12A DO203AA

Vishay General Semiconductor - Diodes Division

73 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 200 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 200 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
STTH60L06W STMicroelectronics

STTH60L06W

DIODE GEN PURP 600V 60A DO247

STMicroelectronics

84 -
Datasheet - DO-247-2 (Straight Leads) Tube Active Standard 600 V 60A 1.55 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 105 ns 50 µA @ 600 V - - - Through Hole DO-247 175°C (Max)
DSA1-16D IXYS

DSA1-16D

DIODE AVALANCHE 1.6KV 2.3A

IXYS

84 -
Datasheet - Radial Box Active Avalanche 1600 V 2.3A 1.34 V @ 7 A Standard Recovery >500ns, > 200mA (Io) - 700 µA @ 1600 V - - - Through Hole - -40°C ~ 150°C
VS-12FR60 Vishay General Semiconductor - Diodes Division

VS-12FR60

DIODE GEN PURP 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

45 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-12F60 Vishay General Semiconductor - Diodes Division

VS-12F60

DIODE GEN PURP 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

100 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 600 V 12A 1.26 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANTX1N6638 Microchip Technology

JANTX1N6638

DIODE GEN PURP 125V 300MA D5B

Microchip Technology

80 -
Datasheet - D, Axial Bulk Active Standard 125 V 300mA 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 125 V - Military MIL-PRF-19500/578 Through Hole D-5D -65°C ~ 175°C
VS-25F40 Vishay General Semiconductor - Diodes Division

VS-25F40

DIODE GEN PURP 400V 25A DO203AA

Vishay General Semiconductor - Diodes Division

69 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 400 V 25A 1.3 V @ 78 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 400 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
VS-1N1206A Vishay General Semiconductor - Diodes Division

VS-1N1206A

DIODE GEN PURP 600V 12A DO203AA

Vishay General Semiconductor - Diodes Division

74 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard 600 V 12A 1.35 V @ 12 A Standard Recovery >500ns, > 200mA (Io) - 1 mA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 200°C
VS-16FR60 Vishay General Semiconductor - Diodes Division

VS-16FR60

DIODE GEN PURP 600V 16A DO203AA

Vishay General Semiconductor - Diodes Division

60 -
Datasheet - DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 16A 1.23 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 12 mA @ 600 V - - - Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANTX1N5418 Microchip Technology

JANTX1N5418

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

75 -
Datasheet - B, Axial Bulk Active Standard 400 V 3A 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
VS-1N1183R Vishay General Semiconductor - Diodes Division

VS-1N1183R

DIODE GEN PURP 50V 35A DO203AB

Vishay General Semiconductor - Diodes Division

63 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 50 V 35A 1.7 V @ 110 A Standard Recovery >500ns, > 200mA (Io) - 10 mA @ 50 V - - - Chassis, Stud Mount DO-203AB (DO-5) -65°C ~ 190°C
TRS12A65F,S1Q Toshiba Semiconductor and Storage

TRS12A65F,S1Q

DIODE SIL CARB 650V 12A TO220F

Toshiba Semiconductor and Storage

40 -
Datasheet - TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.6 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 44pF @ 650V, 1MHz - - Through Hole TO-220F-2L 175°C (Max)
VS-80PFR80W Vishay General Semiconductor - Diodes Division

VS-80PFR80W

DIODE GP REV 800V 80A DO203AB

Vishay General Semiconductor - Diodes Division

87 -
Datasheet - DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 800 V 80A 1.4 V @ 220 A Standard Recovery >500ns, > 200mA (Io) - - - - - Stud Mount DO-203AB (DO-5) -55°C ~ 180°C
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Single Diodes FAQ

What Single Diodes components can I source from EGOO?

You can browse available Single Diodes product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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