PRODUCT DIRECTORY

FET, MOSFET Arrays

Browse available FET, MOSFET Arrays components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.

If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GCMX080A120B2H1P SemiQ

GCMX080A120B2H1P

MOSFET 4N-CH 1200V 27A

SemiQ

13 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 27A (Tc) 100mOhm @ 20A, 20V 4V @ 10mA 56nC @ 20V 1362pF @ 800V 119W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
DF16MR12W1M1HFB67BPSA1 Infineon Technologies

DF16MR12W1M1HFB67BPSA1

MOSFET 2N-CH 1200V 25A

Infineon Technologies

24 -
Datasheet EasyPACK™, CoolSiC™ - Tray Active - 2 N-Channel - 1200V (1.2kV) 25A 32.3mOhm @ 25A, 18V 5.15V @ 10mA 74nC @ 18V 2200pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
GCMX040A120B2H1P SemiQ

GCMX040A120B2H1P

MOSFET 4N-CH 1200V 56A

SemiQ

7 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 56A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 121nC @ 20V 3200pF @ 800V 217W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B2B1P SemiQ

GCMX020A120B2B1P

MOSFET 2N-CH 1200V 102A

SemiQ

20 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 241nC @ 20V 6500pF @ 800V 385W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF33MR12W1M1HB11BPSA1 Infineon Technologies

FF33MR12W1M1HB11BPSA1

MOSFET

Infineon Technologies

23 -
Datasheet - - Tray Active - - - - - - - - - - - - - - -
GCMX040A120B3H1P SemiQ

GCMX040A120B3H1P

MOSFET 4N-CH 1200V 53A

SemiQ

17 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 53A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 125nC @ 20V 3200pF @ 800V 208W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH015P120M3F1PTG onsemi

NXH015P120M3F1PTG

MOSFET 2N-CH 1200V 77A

onsemi

13 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 77A (Tc) 20mOhm @ 60A, 18V 4.4V @ 30mA 211nC @ 18V 4696pF @ 800V 198W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
DF14MR12W1M1HFB67BPSA1 Infineon Technologies

DF14MR12W1M1HFB67BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

24 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
NXH008P120M3F1PG onsemi

NXH008P120M3F1PG

MOSFET 2N-CH 1200V 145A

onsemi

18 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B2H1P SemiQ

GCMX020A120B2H1P

MOSFET 4N-CH 1200V 102A

SemiQ

10 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 222nC @ 20V 5600pF @ 800V 333W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF11MR12W2M1HPB11BPSA1 Infineon Technologies

FF11MR12W2M1HPB11BPSA1

MOSFET 1200V

Infineon Technologies

18 -
Datasheet CoolSiC™ - Tray Active - - - 1200V (1.2kV) - - - - - - - - - - -
GCMX010A120B3B1P SemiQ

GCMX010A120B3B1P

MOSFET 2N-CH 1200V 173A

SemiQ

9 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 173A (Tc) 14mOhm @ 100A, 20V 4V @ 40mA 483nC @ 20V 13800pF @ 800V 577W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B3H1P SemiQ

GCMX020A120B3H1P

MOSFET 4N-CH 1200V 93A

SemiQ

4 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 93A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 250nC @ 20V 6700pF @ 800V 300W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF17MR12W1M1HPB11BPSA1 Infineon Technologies

FF17MR12W1M1HPB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

24 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
DF8MR12W1M1HFB67BPSA1 Infineon Technologies

DF8MR12W1M1HFB67BPSA1

MOSFET 2N-CH 1200V 45A AG-EASY1B

Infineon Technologies

22 -
Datasheet EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 45A 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
FF17MR12W1M1HB70BPSA1 Infineon Technologies

FF17MR12W1M1HB70BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

13 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF17MR12W1M1HB17BPSA1 Infineon Technologies

FF17MR12W1M1HB17BPSA1

MOSFET 2N-CH 1200V 50A AG-EASY1B

Infineon Technologies

24 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 50A (Tj) 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
NXH011F120M3F2PTHG onsemi

NXH011F120M3F2PTHG

MOSFET 4N-CH 1200V 105A 34PIM

onsemi

13 -
Datasheet - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 16mOhm @ 100A, 18V 4.4V @ 60mA 284nC @ 18V 6211.6pF @ 800V 244W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
FF8MR12W1M1HB70BPSA1 Infineon Technologies

FF8MR12W1M1HB70BPSA1

MOSFET

Infineon Technologies

20 -
Datasheet - - Tray Active - - - - - - - - - - - - - - -
FF7MR12W1M1HB17BPSA1 Infineon Technologies

FF7MR12W1M1HB17BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

24 -
Datasheet CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tj) 5.8mOhm @ 120A, 18V 5.15V @ 56mA 400nC @ 18V 12100pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
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FET, MOSFET Arrays FAQ

What FET, MOSFET Arrays components can I source from EGOO?

You can browse available FET, MOSFET Arrays product families, manufacturers and part numbers on this page, then review stock, datasheets and technical information for suitable options.

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Yes. We support BOM sourcing, prototype requirements and small-batch supply, together with stock, lead-time and quotation assistance.

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