FET, MOSFET Arrays
Browse available FET, MOSFET Arrays components by manufacturer and part number. Review stock status, datasheets and key technical parameters to compare suitable options for design, maintenance, replacement or purchasing.
If you already have a target MPN or BOM, send it to EGOO with the required quantity. Our sourcing team can check availability, lead time and quotation options, including hard-to-find and obsolete parts.
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MSCSM170HRM233AGMOSFET 4N-CH 1700V/1200V 124A |
10 | - |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 124A (Tc), 89A (Tc) | 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V | 3.2V @ 5mA, 2.8V @ 3mA | 356nC @ 20V, 232nC @ 20V | 6600pF @ 1000V, 3020pF @ 1000V | 602W (Tc), 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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FF6MR20W2M1HB70BPSA1FF6MR20W2M1HB70BPSA1 |
15 | - |
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Datasheet | EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 2000V (2kV) | 160A (Tj) | 8.1mOhm @ 160A, 18V | 5.15V @ 112mA | 780nC @ 3V | 24100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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F3L6MR20W2M1HB70BPSA1F3L6MR20W2M1HB70BPSA1 |
15 | - |
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Datasheet | EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel | Silicon Carbide (SiC) | 2000V (2kV) | 155A (Tj) | 8.7mOhm @ 100A, 18V | 5.15V @ 112mA | 297nC @ 18V | 24100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120HRM163AGMOSFET 4N-CH 1200V/700V 173A |
10 | - |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV), 700V | 173A (Tc), 124A (Tc) | 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V | 2.8V @ 6mA, 2.4V @ 4mA | 464nC, 215nC @ 20V | 6040pF @ 1000V, 4500pF @ 700V | 745W (Tc), 365W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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CAB6R0A23GM4MOSFET 2N-CH 2300V 150A |
6 | - |
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Datasheet | - | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 2300V (2.3kV) | 150A | 8.4mOhm @ 200A, 15V | 4V @ 95mA | 735nC @ 15V | 30500pF @ 1.5kV | 610W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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FF3MR12KM1HHPSA1MOSFET 2N-CH 1200V 190A AG62MMHB |
19 | - |
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Datasheet | CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 190A (Tc) | 4.44mOhm @ 280A, 18V | 5.1V @ 112mA | 800nC @ 18V | 24200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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FF3MR12KM1HPHPSA1MOSFET 2N-CH 1200V 220A AG62MMHB |
13 | - |
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Datasheet | CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 220A | 4.44mOhm @ 280A, 18V | 5.1V @ 112mA | 800nC @ 18V | 24200pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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APTM100A13SCGMOSFET 2N-CH 1000V 65A SP6 |
4 | - |
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Datasheet | - | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 1000V (1kV) | 65A | 156mOhm @ 32.5A, 10V | 5V @ 6mA | 562nC @ 10V | 15200pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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FF5MR20KM1HHPSA1MOSFET |
9 | - |
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Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF4MR20KM1HPHPSA1MOSFET 2N-CH 2000V AG-62MMHB |
10 | - |
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Datasheet | C, CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 2000V (2kV) | 280A (Tc) | 5.3mOhm @ 300A, 18V | 5.15V @ 168mA | 1170nC @ 18V | 36100pF @ 1.2kV | - | -40°C ~ 175°C | - | - | Chassis Mount | AG-62MMHB |
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BSM450D12P4G102MOSFET 2N-CH 1200V 447A MODULE |
4 | - |
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Datasheet | - | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 447A (Tc) | - | 4.8V @ 218.4mA | - | 44000pF @ 10V | 1.45kW (Tc) | 175°C (TJ) | - | - | Chassis Mount | Module |
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HAS175M12BM3MOSFET 2N-CH 1200V 175A |
3 | - |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 175A | - | - | - | - | - | - | - | - | Chassis Mount | - |
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FF1MR12KM1HHPSA1MOSFET |
12 | - |
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Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF1MR12KM1HPHPSA1MOSFET |
16 | - |
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Datasheet | - | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MSCSM170HRM11NGMOSFET 4N-CH 1700V/1200V 226A |
4 | - |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 226A (Tc), 163A (Tc) | 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V | 3.2V @ 10mA, 2.8V @ 6mA | 712nC @ 20V, 464nC @ 20V | 13200pF @ 1000V, 6040pF @ 1000V | 1.012kW (Tc), 662W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120AM042T6AGMOSFET 2N-CH 1200V 495A |
4 | - |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 18mA | 1392nC @ 20V | 18100pF @ 1000V | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM120HRM08NGMOSFET 4N-CH 1200V/700V 317A |
8 | - |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1200V (1.2kV), 700V | 317A (Tc), 227A (Tc) | 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V | 2.8V @ 12mA, 2.4V @ 8mA | 928nC @ 20V, 430nC @ 20V | 12100pF @ 1000V, 9000pF @ 700V | 1.253kW (Tc), 613W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NVVR26A120M1WSTMOSFET 2N-CH 1200V AHPM15-CDA |
6 | - |
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Datasheet | - | 15-PowerDIP Module (2.441", 62.00mm) | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 400A (Tj) | 2.6mOhm @ 400A, 20V | 3.2V @ 150mA | 1.75µC @ 20V | 31700pF @ 800V | 1kW (Tj) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | AHPM15-CDA |
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ADP46075W3MOSFET 6N-CH 750V 485A ACEPACK |
5 | - |
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Datasheet | - | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel | - | 750V | 485A (Tj) | 2.05mOhm @ 460A, 18V | 4.4V @ 40mA | 984nC @ 18V | 27050pF @ 400V | 704W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | ACEPACK |
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MSCSM170HRM075NGMOSFET 4N-CH 1700V/1200V 337A |
7 | - |
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Datasheet | - | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 1700V (1.7kV), 1200V (1.2kV) | 337A (Tc), 317A (Tc) | 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V | 3.2V @ 15mA, 2.8V @ 12mA | 1068nC @ 20V, 928nC @ 20V | 19800pF @ 1000V, 12100pF @ 1000V | 1.492kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
FET, MOSFET Arrays FAQ
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