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FET, MOSFET Arrays

Compare the current FET, MOSFET Arrays FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MSCSM170HRM075NG Microchip Technology

MSCSM170HRM075NG

MOSFET 4N-CH 1700V/1200V 337A

Microchip Technology

7 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 337A (Tc), 317A (Tc) 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V 3.2V @ 15mA, 2.8V @ 12mA 1068nC @ 20V, 928nC @ 20V 19800pF @ 1000V, 12100pF @ 1000V 1.492kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCM20XM16F4G Microchip Technology

MSCM20XM16F4G

MOSFET 200V 77A SP4

Microchip Technology

6 -
Datasheet - Module Tube Active - - - 200V 77A (Tc) - - - - - - - - Chassis Mount SP4
MSCSM120TLM31C3AG Microchip Technology

MSCSM120TLM31C3AG

MOSFET 4N-CH 1200V 89A SP3F

Microchip Technology

4 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
APTMC120AM25CT3AG Microchip Technology

APTMC120AM25CT3AG

MOSFET 2N-CH 1200V 113A SP3

Microchip Technology

7 -
Datasheet - SP3 Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 113A (Tc) 25mOhm @ 80A, 20V 2.2V @ 4mA (Typ) 197nC @ 20V 3800pF @ 1000V 500W -40°C ~ 150°C (TJ) - - Chassis Mount SP3
MSCSM120TLM16C3AG Microchip Technology

MSCSM120TLM16C3AG

MOSFET 4N-CH 1200V 173A SP3F

Microchip Technology

2 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM120DDUM16CTBL3NG Microchip Technology

MSCSM120DDUM16CTBL3NG

MOSFET 4N-CH 1200V 150A

Microchip Technology

6 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 150A 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 560W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70AM025CD3AG Microchip Technology

MSCSM70AM025CD3AG

SIC 700V 538A D3

Microchip Technology

4 -
Datasheet - Module Box Active Silicon Carbide (SiC) - - 700V 538A (Tc) - - - - - - - - Chassis Mount D3
MSCSM70TAM19CT3AG Microchip Technology

MSCSM70TAM19CT3AG

MOSFET 6N-CH 700V 124A SP3F

Microchip Technology

1 -
Datasheet - Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70DUM017AG Microchip Technology

MSCSM70DUM017AG

MOSFET 2N-CH 700V 1021A

Microchip Technology

5,247 -
Datasheet - Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 1021A (Tc) 2.1mOhm @ 360A, 20V 2.4V @ 36mA 1935nC @ 20V 40500pF @ 700V 2750W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM058CT6LIAG Microchip Technology

MSCSM170AM058CT6LIAG

MOSFET 2N-CH 1700V 353A

Microchip Technology

3,712 -
Datasheet - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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FET, MOSFET Arrays FAQ

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