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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
G700P06D3 Goford Semiconductor

G700P06D3

P-60V,-18A,RD(MAX)<70M@-10V,VTH-

Goford Semiconductor

770 -
Datasheet G 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1446 pF @ 30 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
G900P15T Goford Semiconductor

G900P15T

MOSFET P-CH 150V 60A TO-220

Goford Semiconductor

1,000 -
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 60A (Tc) 10V 80mOhm @ 5A, 10V 4V @ 250µA - ±20V - - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G700P06J Goford Semiconductor

G700P06J

P-60V,-23A,RD(MAX)<70M@-10V,VTH-

Goford Semiconductor

30 -
Datasheet TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active P-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 4.5V, 10V 70mOhm @ 6A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 1465 pF @ 30 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-251
G700P06T Goford Semiconductor

G700P06T

P-60V,25A,RD<70M@-10V,VTH1V~-2.5

Goford Semiconductor

97 -
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 4.5V, 10V 70mOhm @ 4A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 1428 pF @ 30 V - 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G2K2P10D3E Goford Semiconductor

G2K2P10D3E

MOSFET P-CH ESD 100V 10A DFN3*3-

Goford Semiconductor

352 -
Datasheet TrenchFET® 8-PowerVDFN Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4.5V, 10V 210mOhm @ -6A, -10V 2.5V @ 250µA 33 nC @ 10 V ±20V 1668 pF @ 50 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
5N20A Goford Semiconductor

5N20A

N200V,RD(MAX)<650M@10V,VTH1V~3V,

Goford Semiconductor

747 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 580mOhm @ 2.5A, 10V 3V @ 250µA 11 nC @ 10 V ±20V 247 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
G630J Goford Semiconductor

G630J

N200V, 9A,RD<0.28@10V,VTH1.0V~3.

Goford Semiconductor

140 -
Datasheet TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 250mOhm @ 4.5A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 515 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251
G400P06T Goford Semiconductor

G400P06T

P-60V,-32A,RD(MAX)<40M@-10V,VTH-

Goford Semiconductor

64 -
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 10V 40mOhm @ 12A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 2598 pF @ 30 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G60N06T Goford Semiconductor

G60N06T

N60V, 50A,RD<17M@10V,VTH1.0V~2.0

Goford Semiconductor

53 -
Datasheet TrenchFET® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 17mOhm @ 5A, 10V 2V @ 250µA 39 nC @ 10 V ±20V 2333 pF @ 30 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G58N06F Goford Semiconductor

G58N06F

N60V, 35A,RD<13M@10V,VTH1.0V~2.4

Goford Semiconductor

100 -
Datasheet TrenchFET® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 13mOhm @ 30A, 10V 2.4V @ 250µA 75 nC @ 10 V ±20V 30006 pF @ 30 V - 44W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
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FETs, MOSFETs FAQ

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