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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
GT025N06AT Goford Semiconductor

GT025N06AT

N60V, 170A,RD<2.5M@10V,VTH1.2V~2

Goford Semiconductor

8 -
Datasheet SGT TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 170A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V 2.5V @ 250µA 70 nC @ 10 V ±20V 4954 pF @ 30 V - 215W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT035N10T Goford Semiconductor

GT035N10T

N100V,190A,RD<3.5M@10V,VTH2.0V~4

Goford Semiconductor

23 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 10V 3.5mOhm @ 20A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 6057 pF @ 50 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT042P06M Goford Semiconductor

GT042P06M

MOSFET P-CH 60V 160A 280W 4.5M(M

Goford Semiconductor

2,197 -
Datasheet SGT - Active P-Channel MOSFET (Metal Oxide) 60 V 160A (Tc) 10V 4.5mOhm @ 15A, 10V 3V @ 250µA 305 nC @ 10 V 20V 9389 pF @ 30 V - 280W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount -
GT070N15Q Goford Semiconductor

GT070N15Q

MOSFET N-CH 150V 155A 330W 5.8M(

Goford Semiconductor

2,946 -
Datasheet SGT - Active N-Channel MOSFET (Metal Oxide) 150 V 155A (Tc) 10V 5.8mOhm @ 40A, 10V 4V @ 250µA 89 nC @ 10 V 20V 5840 pF @ 75 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount -
GT016N10Q Goford Semiconductor

GT016N10Q

MOSFET N-CH 100V 228A TO-247

Goford Semiconductor

25 -
Datasheet - - Tube Active - MOSFET (Metal Oxide) - 228A (Tc) 10V 2.2mOhm @ 20A, 10V 4.5V @ 250µA 165 nC @ 10 V ±20V 9530 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount TO-247-3
GT095N10K Goford Semiconductor

GT095N10K

MOSFET N-CH 100V 55A TO-252

Goford Semiconductor

3,113 -
Datasheet SGT TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 55A (Tc) 4.5V, 10V 10.5mOhm @ 35A, 10V 2.5V @ 250µA - ±20V - - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
GS120R045Q4 Goford Semiconductor

GS120R045Q4

SiC MOSFET N-CH 1200V 60A TO-24

Goford Semiconductor

4,923 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 18V 52mOhm @ 20A, 18V 4V @ 10mA - -10V, +20V 2565 pF @ 1000 V - 395W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
GS65R038Q4 Goford Semiconductor

GS65R038Q4

SiC MOSFET N-CH 650V 60A TO-247

Goford Semiconductor

6,522 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 60A (Tc) 18V 49mOhm @ 30A, 18V 4V @ 10mA - -10V, +20V 1480 pF @ 1000 V - 395W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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