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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
18N20J Goford Semiconductor

18N20J

MOSFET N-CH 200V 18A TO-251

Goford Semiconductor

1,000 -
Datasheet TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) - 18A (Tc) 10V 160mOhm @ 9A, 10V 3V @ 250µA - ±30V - - 65.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251
GT130N10F Goford Semiconductor

GT130N10F

MOSFET N-CH 100V 45A 41.7W 12m(

Goford Semiconductor

1,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Tc) 10V 12mOhm @ 20A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 1215 pF @ 50 V - 41.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
GT180N12M Goford Semiconductor

GT180N12M

MOSFET N-CH 120V 55A 96W 17m(max

Goford Semiconductor

800 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 55A (Tc) 10V 17mOhm @ 20A, 10V 4.5V @ 250µA 22 nC @ 10 V ±20V 1635 pF @ 60 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
18N20F Goford Semiconductor

18N20F

MOSFET N-CH 200V 18A TO-220F

Goford Semiconductor

1,000 -
Datasheet TrenchFET® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) - 18A (Tc) 10V 190mOhm @ 9A, 10V 3V @ 250µA - ±20V - - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
G75P04T Goford Semiconductor

G75P04T

MOSFET P-CH 40V 70A TO-220

Goford Semiconductor

1,000 -
Datasheet TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 70A (Tc) 4.5V, 10V 7mOhm @ 20A, 10V 2.5V @ 250µA - ±20V - - 277W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G75P04F Goford Semiconductor

G75P04F

MOSFET P-CH 40V 54A TO-220F

Goford Semiconductor

1,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 40 V 54A (Tc) 4.5V, 10V 7mOhm @ -10A, -10V 2.5V @ 250µA 106 nC @ -10 V ±20V 6768 pF @ -20 V - 35.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
GT065P06M Goford Semiconductor

GT065P06M

MOSFET P-CH 60V 103A 178W 9m(max

Goford Semiconductor

800 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 103A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2.5V @ 250µA 62 nC @ 10 V ±20V 5985 pF @ 30 V - 178W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
G030N06T Goford Semiconductor

G030N06T

MOSFET N-CH 60V 223A TO-220

Goford Semiconductor

1,000 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 223A (Tc) 4.5V, 10V 2.7mOhm @ 30A, 10V 2.5V @ 250µA 101 nC @ 4.5 V ±20V 11999 pF @ 30 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
G080N10T Goford Semiconductor

G080N10T

MOSFET N-CH 100V 140A 236W TO-2

Goford Semiconductor

1,000 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 2.5V @ 250µA 192 nC @ 10 V ±20V 13912 pF @ 50 V - 236W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
GT035N06T Goford Semiconductor

GT035N06T

MOSFET N-CH 60V 170A TO-220

Goford Semiconductor

1,000 -
Datasheet SGT TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) - 170A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.5V @ 250µA - ±20V - - 215W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
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FETs, MOSFETs FAQ

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