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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPA80R1K4P7XKSA1 Infineon Technologies

IPA80R1K4P7XKSA1

MOSFET N-CH 800V 4A TO220-3F

Infineon Technologies

995 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 700µA 10 nC @ 10 V ±20V 250 pF @ 500 V - 24W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPP80R1K4P7XKSA1 Infineon Technologies

IPP80R1K4P7XKSA1

MOSFET N-CH 800V 4A TO220-3

Infineon Technologies

499 -
Datasheet CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 70µA 10 nC @ 10 V ±20V 250 pF @ 500 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
BSC020N03LSGATMA1 Infineon Technologies

BSC020N03LSGATMA1

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies

17,249 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 100A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 2.2V @ 250µA 93 nC @ 10 V ±20V 7200 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-1
IPD60R600P6ATMA1 Infineon Technologies

IPD60R600P6ATMA1

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies

4,896 -
Datasheet CoolMOS™ P6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPAN60R360PFD7SXKSA1 Infineon Technologies

IPAN60R360PFD7SXKSA1

MOSFET N-CH 650V 10A TO220

Infineon Technologies

534 -
Datasheet CoolMOS™PFD7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 360mOhm @ 2.9A, 10V 4.5V @ 140µA 12.7 nC @ 10 V ±20V 534 pF @ 400 V - 23W (Tc) -40°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPD18DP10LMATMA1 Infineon Technologies

IPD18DP10LMATMA1

TRENCH >=100V PG-TO252-3

Infineon Technologies

2,081 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 2.5A (Ta), 13.9A (Tc) 4.5V, 10V 178mOhm @ 13A, 10V 2V @ 1.04mA 42 nC @ 10 V ±20V 2100 pF @ 50 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
ISZ0602NLSATMA1 Infineon Technologies

ISZ0602NLSATMA1

MOSFET N-CH 80V 12A/64A TSDSON

Infineon Technologies

9,817 -
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 12A (Ta), 64A (Tc) 4.5V, 10V 7.8mOhm @ 20A, 10V 2.3V @ 29µA 29 nC @ 10 V ±20V 1860 pF @ 40 V - 2.1W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8-26
ISZ019N03L5SATMA1 Infineon Technologies

ISZ019N03L5SATMA1

MOSFET N-CH 30V 22A/40A TSDSON

Infineon Technologies

7,128 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 40A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2V @ 250µA 44 nC @ 10 V ±20V 2800 pF @ 15 V - - -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8-FL
IPD096N08N3GATMA1 Infineon Technologies

IPD096N08N3GATMA1

MOSFET N-CH 80V 73A TO252-3

Infineon Technologies

2,463 -
Datasheet OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 73A (Tc) 6V, 10V 9.6mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
IPD60R600C6ATMA1 Infineon Technologies

IPD60R600C6ATMA1

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies

8,732 -
Datasheet CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
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FETs, MOSFETs FAQ

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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