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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SPA15N60C3XKSA1 Infineon Technologies

SPA15N60C3XKSA1

MOSFET N-CH 650V 15A TO220-FP

Infineon Technologies

211 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
IPP016N08NF2SAKMA1 Infineon Technologies

IPP016N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies

482 -
Datasheet StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 35A (Ta), 196A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V 3.8V @ 267µA 255 nC @ 10 V ±20V 12000 pF @ 40 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
IPP014N06NF2SAKMA2 Infineon Technologies

IPP014N06NF2SAKMA2

TRENCH 40<-<100V PG-TO220-3

Infineon Technologies

1,000 -
Datasheet StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 39A (Ta), 198A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.3V @ 246µA 305 nC @ 10 V ±20V 13800 pF @ 30 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-U05
IPB65R190CFDAATMA1 Infineon Technologies

IPB65R190CFDAATMA1

MOSFET N-CH 650V 17.5A D2PAK

Infineon Technologies

1,182 -
Datasheet CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
IPF024N10NF2SATMA1 Infineon Technologies

IPF024N10NF2SATMA1

TRENCH >=100V

Infineon Technologies

729 -
Datasheet StrongIRFET™ 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 227A (Tc) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-14
IPB026N10NF2SATMA1 Infineon Technologies

IPB026N10NF2SATMA1

TRENCH >=100V

Infineon Technologies

2,024 -
Datasheet StrongIRFET™ 2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 162A (Tc) 6V, 10V 2.65mOhm @ 100A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3
IPB016N06L3GATMA1 Infineon Technologies

IPB016N06L3GATMA1

MOSFET N-CH 60V 180A TO263-7

Infineon Technologies

9,298 -
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 4.5V, 10V 1.6mOhm @ 100A, 10V 2.2V @ 196µA 166 nC @ 4.5 V ±20V 28000 pF @ 30 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7
SPB21N50C3ATMA1 Infineon Technologies

SPB21N50C3ATMA1

MOSFET N-CH 560V 21A TO263-3

Infineon Technologies

2,683 -
Datasheet CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
IPB65R150CFDATMA2 Infineon Technologies

IPB65R150CFDATMA2

MOSFET N-CH 650V 22.4A TO263-3

Infineon Technologies

1,327 -
Datasheet CoolMOS™ CFD2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPF017N08NF2SATMA1 Infineon Technologies

IPF017N08NF2SATMA1

TRENCH 40<-<100V PG-TO263-7

Infineon Technologies

1,455 -
Datasheet StrongIRFET™ 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 259A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.8V @ 194µA 186 nC @ 10 V ±20V 8700 pF @ 40 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-14
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FETs, MOSFETs FAQ

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