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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSC0805LSATMA1 Infineon Technologies

BSC0805LSATMA1

MOSFET N-CH 100V 79A TDSON-8-6

Infineon Technologies

4,450 -
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 79A (Tc) 4.5V, 10V 7mOhm @ 40A, 10V 2.3V @ 49µA 20 nC @ 4.5 V ±20V 2700 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TDSON-8-6
IRF3315L Infineon Technologies

IRF3315L

MOSFET N-CH 150V 21A TO262

Infineon Technologies

7,112 -
Datasheet HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IRF3709ZSTRRPBF Infineon Technologies

IRF3709ZSTRRPBF

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies

5,985 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF5210STRR Infineon Technologies

IRF5210STRR

MOSFET P-CH 100V 40A D2PAK

Infineon Technologies

5,480 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 60mOhm @ 24A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 2700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRFB33N15D Infineon Technologies

IRFB33N15D

MOSFET N-CH 150V 33A TO220AB

Infineon Technologies

9,955 -
Datasheet HEXFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF7220 Infineon Technologies

IRF7220

MOSFET P-CH 14V 11A 8SO

Infineon Technologies

7,335 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 14 V 11A (Ta) 2.5V, 4.5V 12mOhm @ 11A, 4.5V 600mV @ 250µA (Min) 125 nC @ 5 V ±12V 8075 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7324D1 Infineon Technologies

IRF7324D1

MOSFET P-CH 20V 2.2A 8SO

Infineon Technologies

4,811 -
Datasheet FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V 700mV @ 250µA (Min) 7.8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7233 Infineon Technologies

IRF7233

MOSFET P-CH 12V 9.5A 8SO

Infineon Technologies

8,052 -
Datasheet HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9.5A (Ta) 2.5V, 4.5V 20mOhm @ 9.5A, 4.5V 600mV @ 250µA (Min) 74 nC @ 5 V ±12V 6000 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRF7322D1 Infineon Technologies

IRF7322D1

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies

7,827 -
Datasheet FETKY™ 8-SOIC (0.154", 3.90mm Width) Tube Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 2.7V, 4.5V 62mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 29 nC @ 4.5 V ±12V 780 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
IRFS33N15D Infineon Technologies

IRFS33N15D

MOSFET N-CH 150V 33A D2PAK

Infineon Technologies

7,411 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?

Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.

What information should I provide when requesting a quote?

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