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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IMBG65R048M1HXTMA1 Infineon Technologies

IMBG65R048M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

865 -
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V 64mOhm @ 20.1A, 18V 5.7V @ 6mA 33 nC @ 18 V +23V, -5V 1118 pF @ 400 V - 183W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
SPW35N60CFDFKSA1 Infineon Technologies

SPW35N60CFDFKSA1

MOSFET N-CH 600V 34.1A TO247-3

Infineon Technologies

240 -
Datasheet CoolMOS™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 34.1A (Tc) 10V 118mOhm @ 21.6A, 10V 5V @ 1.9mA 212 nC @ 10 V ±20V 5060 pF @ 25 V - 313W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-1
IMZA65R048M1HXKSA1 Infineon Technologies

IMZA65R048M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies

420 -
Datasheet CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tc) 18V 64mOhm @ 20.1A, 18V 5.7V @ 6mA 33 nC @ 18 V +23V, -5V 1118 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-3
IPW65R048CFDAFKSA1 Infineon Technologies

IPW65R048CFDAFKSA1

MOSFET N-CH 650V 63.3A TO247-3

Infineon Technologies

284 -
Datasheet CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 63.3A (Tc) 10V 48mOhm @ 29.4A, 10V 4.5V @ 2.9mA 270 nC @ 10 V ±20V 7440 pF @ 100 V - 500W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3
IPW65R029CFD7XKSA1 Infineon Technologies

IPW65R029CFD7XKSA1

MOSFET N-CH 650V 69A TO247-3

Infineon Technologies

154 -
Datasheet CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 69A (Tc) - 29mOhm @ 35.8A, 10V 4.5V @ 1.79mA 145 nC @ 10 V ±20V 7149 pF @ 400 V - 305W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
IPW65R041CFDFKSA2 Infineon Technologies

IPW65R041CFDFKSA2

MOSFET N-CH 650V 68.5A TO247-3

Infineon Technologies

611 -
Datasheet CoolMOS™ CFD2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 68.5A (Tc) 10V 41mOhm @ 33.1A, 10V 4.5V @ 3.3mA 300 nC @ 10 V ±20V 8400 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
IMBG65R030M1HXTMA1 Infineon Technologies

IMBG65R030M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

924 -
Datasheet CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 63A (Tc) 18V 42mOhm @ 29.5A, 18V 5.7V @ 8.8mA 49 nC @ 18 V +23V, -5V 1643 pF @ 400 V - 234W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
IPZ65R019C7XKSA1 Infineon Technologies

IPZ65R019C7XKSA1

MOSFET N-CH 650V 75A TO247-4

Infineon Technologies

1,153 -
Datasheet CoolMOS™ C7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 19mOhm @ 58.3A, 10V 4V @ 2.92mA 215 nC @ 10 V ±20V 9900 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
BSD316SNH6327XTSA1 Infineon Technologies

BSD316SNH6327XTSA1

MOSFET N-CH 30V 1.4A SOT363-6

Infineon Technologies

5,735 -
Datasheet OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 1.4A (Ta) 4.5V, 10V 160mOhm @ 1.4A, 10V 2V @ 3.7µA 0.6 nC @ 5 V ±20V 94 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT363-PO
IPP80R900P7XKSA1 Infineon Technologies

IPP80R900P7XKSA1

MOSFET N-CH 800V 6A TO220-3

Infineon Technologies

8,619 -
Datasheet CoolMOS™ P7 TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 2.2A, 10V 3.5V @ 110µA 15 nC @ 10 V ±20V 350 pF @ 500 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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