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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPD60R1K0PFD7SAUMA1 Infineon Technologies

IPD60R1K0PFD7SAUMA1

CONSUMER PG-TO252-3

Infineon Technologies

268 -
Datasheet CoolMOS™ PFD7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4.7A (Tc) 10V 1Ohm @ 1A, 10V 4.5V @ 50µA 6 nC @ 10 V ±20V 230 pF @ 400 V - 26W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD60R800CEAUMA1 Infineon Technologies

IPD60R800CEAUMA1

CONSUMER

Infineon Technologies

2,497 -
Datasheet CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 800mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 74W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-344
IPN80R2K0P7ATMA1 Infineon Technologies

IPN80R2K0P7ATMA1

MOSFET N-CHANNEL 800V 3A SOT223

Infineon Technologies

3,000 -
Datasheet CoolMOS™ P7 TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 2Ohm @ 940mA, 10V 3.5V @ 50µA 9 nC @ 10 V ±20V 175 pF @ 500 V - 6.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223
SPD04P10PLGBTMA1 Infineon Technologies

SPD04P10PLGBTMA1

MOSFET P-CH 100V 4.2A TO252-3

Infineon Technologies

2,158 -
Datasheet SIPMOS® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 4.2A (Tc) 4.5V, 10V 850mOhm @ 3A, 10V 2V @ 380µA 16 nC @ 10 V ±20V 372 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
IPD60R1K4C6ATMA1 Infineon Technologies

IPD60R1K4C6ATMA1

MOSFET N-CH 600V 3.2A TO252-3

Infineon Technologies

19,885 -
Datasheet CoolMOS™ C6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD60R600PFD7SAUMA1 Infineon Technologies

IPD60R600PFD7SAUMA1

CONSUMER PG-TO252-3

Infineon Technologies

4,694 -
Datasheet CoolMOS™ PFD7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4.5V @ 80µA 8.5 nC @ 10 V ±20V 344 pF @ 400 V - 31W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3
IPD60R650CEAUMA1 Infineon Technologies

IPD60R650CEAUMA1

CONSUMER

Infineon Technologies

2,496 -
Datasheet CoolMOS™ CE TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9.9A (Tc) 10V 650mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 82W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-344
ISC046N04NM5ATMA1 Infineon Technologies

ISC046N04NM5ATMA1

40V 4.6M OPTIMOS MOSFET SUPERSO8

Infineon Technologies

14,250 -
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 77A (Tc) 7V, 10V 4.6mOhm @ 35A, 10V 3.4V @ 17µA 21 nC @ 10 V ±20V 1400 pF @ 20 V - 3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8 FL
BSZ035N03MSGATMA1 Infineon Technologies

BSZ035N03MSGATMA1

MOSFET N-CH 30V 18A/40A 8TSDSON

Infineon Technologies

11,581 -
Datasheet OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 40A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2V @ 250µA 74 nC @ 10 V ±20V 5700 pF @ 15 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8
IPU80R1K4P7AKMA1 Infineon Technologies

IPU80R1K4P7AKMA1

MOSFET N-CH 800V 4A TO251-3

Infineon Technologies

6 -
Datasheet CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 700µA 10.05 nC @ 10 V ±20V 250 pF @ 500 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-21
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FETs, MOSFETs FAQ

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