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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IQE004NE1LM7ATMA1 Infineon Technologies

IQE004NE1LM7ATMA1

TRENCH <= 40V

Infineon Technologies

4,360 -
Datasheet OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-5
IRFSL5615PBF Infineon Technologies

IRFSL5615PBF

MOSFET N-CH 150V 33A TO262

Infineon Technologies

964 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
IQE220N15NM5CGATMA1 Infineon Technologies

IQE220N15NM5CGATMA1

TRENCH >=100V

Infineon Technologies

4,970 -
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 22mOhm @ 16A, 10V 4.6V @ 46µA 18.3 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-3
IQE220N15NM5ATMA1 Infineon Technologies

IQE220N15NM5ATMA1

TRENCH >=100V

Infineon Technologies

5,000 -
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 7A (Ta), 44A (Tc) 8V, 10V 22mOhm @ 16A, 10V 4.6V @ 46µA 18 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-5
IRF3007STRLPBF Infineon Technologies

IRF3007STRLPBF

MOSFET N CH 75V 62A D2PAK

Infineon Technologies

3,095 -
Datasheet HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 62A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IPB80N06S209ATMA2 Infineon Technologies

IPB80N06S209ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

777 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8.8mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 2360 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPA65R310CFDXKSA2 Infineon Technologies

IPA65R310CFDXKSA2

MOSFET N-CH 650V 11.4A TO220

Infineon Technologies

536 -
Datasheet CoolMOS™ CFD2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPP65R310CFDXKSA2 Infineon Technologies

IPP65R310CFDXKSA2

MOSFET N-CH 650V 11.4A TO220-3

Infineon Technologies

500 -
Datasheet CoolMOS™ CFD2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
IPI60R190C6XKSA1 Infineon Technologies

IPI60R190C6XKSA1

MOSFET N-CH 600V 20.2A TO262-3

Infineon Technologies

495 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPU95R450P7AKMA1 Infineon Technologies

IPU95R450P7AKMA1

MOSFET N-CH 950V 14A TO251-3

Infineon Technologies

1,500 -
Datasheet CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 950 V 14A (Tc) 10V 450mOhm @ 7.2A, 10V 3.5V @ 360µA 35 nC @ 10 V ±20V 1053 pF @ 400 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
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FETs, MOSFETs FAQ

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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