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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IPP076N15N5XKSA1 Infineon Technologies

IPP076N15N5XKSA1

TRENCH >=100V

Infineon Technologies

500 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 112A (Tc) 8V, 10V 7.6mOhm @ 56A, 10V 4.6V @ 160µA 61 nC @ 10 V ±20V 4700 pF @ 75 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IPB120N04S4L02ATMA1 Infineon Technologies

IPB120N04S4L02ATMA1

MOSFET N-CH 40V 120A D2PAK

Infineon Technologies

455 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.7mOhm @ 100A, 10V 2.2V @ 110µA 190 nC @ 10 V +20V, -16V 14560 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
IAUCN10S7N040ATMA1 Infineon Technologies

IAUCN10S7N040ATMA1

IAUCN10S7N040ATMA1

Infineon Technologies

4,975 -
Datasheet OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tj) 7V, 10V 4mOhm @ 60A, 10V 3.2V @ 66µA 51.1 nC @ 10 V ±20V 3660 pF @ 50 V - 142W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
IPB160N04S4LH1ATMA1 Infineon Technologies

IPB160N04S4LH1ATMA1

MOSFET N-CH 40V 160A TO263-7

Infineon Technologies

1,895 -
Datasheet OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 1.5mOhm @ 100A, 10V 2.2V @ 110µA 190 nC @ 10 V +20V, -16V 14950 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
IQE004NE1LM7SCATMA1 Infineon Technologies

IQE004NE1LM7SCATMA1

TRENCH <= 40V

Infineon Technologies

10,803 -
Datasheet OptiMOS™ 7 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-WHSON-8
IQE004NE1LM7CGSCATMA1 Infineon Technologies

IQE004NE1LM7CGSCATMA1

TRENCH <= 40V

Infineon Technologies

10,806 -
Datasheet OptiMOS™ 7 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-WHTFN-9
IQE022N06LM5ATMA1 Infineon Technologies

IQE022N06LM5ATMA1

TRENCH 40<-<100V

Infineon Technologies

4,927 -
Datasheet OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.3V @ 48µA 53 nC @ 10 V ±20V 4420 pF @ 30 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-5
IQE022N06LM5CGATMA1 Infineon Technologies

IQE022N06LM5CGATMA1

TRENCH 40<-<100V

Infineon Technologies

3,420 -
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.3V @ 48µA 53 nC @ 10 V ±20V 4420 pF @ 30 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-3
IPB65R310CFDATMA2 Infineon Technologies

IPB65R310CFDATMA2

MOSFET N-CH 650V 11.4A TO263-3

Infineon Technologies

933 -
Datasheet CoolMOS™ CFD2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPP020N06NXKSA1 Infineon Technologies

IPP020N06NXKSA1

TRENCH 40<-<100V

Infineon Technologies

498 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.3V @ 143µA 124 nC @ 10 V ±20V 9750 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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