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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IAUMN10S5N016GAUMA1 Infineon Technologies

IAUMN10S5N016GAUMA1

MOSFET_(75V 120V(

Infineon Technologies

1,965 -
Datasheet OptiMOS™ 5 4-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 220A (Tj) 6V, 10V 1.6mOhm @ 100A, 10V 3.8V @ 230µA 190 nC @ 10 V ±20V 13570 pF @ 50 V - 325W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-4-1
IAUA210N10S5N024AUMA1 Infineon Technologies

IAUA210N10S5N024AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies

3,600 -
Datasheet OptiMOS™ 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 210A (Tj) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 150µA 119 nC @ 10 V ±20V 8696 pF @ 50 V - 238W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
IPP039N10N5AKSA1 Infineon Technologies

IPP039N10N5AKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies

500 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3.9mOhm @ 50A, 10V 3.8V @ 125µA 95 nC @ 10 V ±20V 7000 pF @ 50 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
AUIRF7736M2TR Infineon Technologies

AUIRF7736M2TR

MOSFET N-CH 40V 22A DIRECTFET

Infineon Technologies

3,844 -
Datasheet HEXFET® DirectFET™ Isometric M4 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 22A (Ta), 108A (Tc) 10V 3mOhm @ 65A, 10V 4V @ 150µA 108 nC @ 10 V ±20V 4267 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric M4
IPA90R500C3XKSA2 Infineon Technologies

IPA90R500C3XKSA2

MOSFET N-CH 900V 11A TO220

Infineon Technologies

1,915 -
Datasheet CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
IPP020N06NAKSA1 Infineon Technologies

IPP020N06NAKSA1

MOSFET N-CH 60V 29A/120A TO220-3

Infineon Technologies

662 -
Datasheet OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 2.8V @ 143µA 106 nC @ 10 V ±20V 7800 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
GS-065-004-6-L-MR Infineon Technologies Canada Inc.

GS-065-004-6-L-MR

GS-065-004-6-L-MR

Infineon Technologies Canada Inc.

357 -
Datasheet - 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 4.6A (Tc) 6V 455mOhm @ 1.2A, 6V 2.6V @ 1mA 0.8 nC @ 6 V +7V, -10V 26 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
IPDQ65R099CFD7XTMA1 Infineon Technologies

IPDQ65R099CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

750 -
Datasheet CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 99mOhm @ 9.7A, 10V 4.5V @ 480µA 39 nC @ 10 V ±20V 1942 pF @ 400 V - 186W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
SPI21N50C3XKSA1 Infineon Technologies

SPI21N50C3XKSA1

MOSFET N-CH 560V 21A TO262-3

Infineon Technologies

940 -
Datasheet CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
IPA65R150CFDXKSA2 Infineon Technologies

IPA65R150CFDXKSA2

MOSFET N-CH 650V 22.4A TO220

Infineon Technologies

494 -
Datasheet CoolMOS™ CFD2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
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FETs, MOSFETs FAQ

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