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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IQD009N06NM5CGATMA1 Infineon Technologies

IQD009N06NM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Infineon Technologies

4,872 -
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 42A (Ta), 445A (Tc) 6V, 10V 0.9mOhm @ 50A, 10V 3.3V @ 163µA 150 nC @ 10 V ±20V 12000 pF @ 30 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
IPL60R180P6AUMA1 Infineon Technologies

IPL60R180P6AUMA1

MOSFET N-CH 600V 22.4A 4VSON

Infineon Technologies

4,990 -
Datasheet CoolMOS™ P6 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 22.4A (Tc) 10V 180mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
IPB60R160P6ATMA1 Infineon Technologies

IPB60R160P6ATMA1

MOSFET N-CH 600V 23.8A D2PAK

Infineon Technologies

2,219 -
Datasheet CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IAUA180N10S5N029AUMA1 Infineon Technologies

IAUA180N10S5N029AUMA1

MOSFET_(75V 120V( PG-HSOF-5

Infineon Technologies

1,926 -
Datasheet OptiMOS™ 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tj) 6V, 10V 2.9mOhm @ 90A, 10V 3.8V @ 130µA 105 nC @ 10 V ±20V 7673 pF @ 50 V - 221W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
IPT65R155CFD7XTMA1 Infineon Technologies

IPT65R155CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

2,000 -
Datasheet - 8-PowerSFN Tape & Reel (TR) Active - - 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-3
AUIRFR4615TRL Infineon Technologies

AUIRFR4615TRL

MOSFET N-CH 150V 33A DPAK

Infineon Technologies

3,000 -
Datasheet HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
IPB80N06S2H5ATMA2 Infineon Technologies

IPB80N06S2H5ATMA2

MOSFET N-CH 55V 80A TO263-3

Infineon Technologies

875 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IPB80N04S204ATMA2 Infineon Technologies

IPB80N04S204ATMA2

MOSFET N-CH 40V 80A TO263-3

Infineon Technologies

6,388 -
Datasheet OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.4mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
IQD016N08NM5CGATMA1 Infineon Technologies

IQD016N08NM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Infineon Technologies

4,824 -
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Ta), 323A (Tc) 6V, 10V 1.57mOhm @ 50A, 10V 3.8V @ 159µA 133 nC @ 10 V ±20V 9200 pF @ 40 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
IQD020N10NM5CGATMA1 Infineon Technologies

IQD020N10NM5CGATMA1

OPTIMOS 6 POWER-TRANSISTOR

Infineon Technologies

4,942 -
Datasheet OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Ta), 273A (Tc) 6V, 10V 2.05mOhm @ 50A, 10V 3.8V @ 159µA 134 nC @ 10 V ±20V 9500 pF @ 50 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
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FETs, MOSFETs FAQ

How can I narrow the current FETs, MOSFETs selection?

Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

Can EGOO help source hard-to-find or obsolete FETs, MOSFETs parts?

Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

Can I request a quotation for a BOM or small-batch requirement?

Yes. EGOO supports BOM sourcing, prototype quantities and small-batch purchasing. Provide your part list and quantities for a quotation review.

What information should I provide when requesting a quote?

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