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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
MSC090SMA070B Microchip Technology

MSC090SMA070B

SICFET N-CH 700V TO247-3

Microchip Technology

127 -
Datasheet - TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 700 V - - - - - - - - - -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
MSC180SMA120S Microchip Technology

MSC180SMA120S

MOSFET SIC 1200 V 180 MOHM TO-26

Microchip Technology

256 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 20V 225mOhm @ 8A, 20V 3.26V @ 500µA 34 nC @ 20 V +23V, -10V 510 pF @ 1000 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT22F80B Microchip Technology

APT22F80B

MOSFET N-CH 800V 23A TO247

Microchip Technology

262 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 23A (Tc) 10V 500mOhm @ 12A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 4595 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
APT30M70BVRG Microchip Technology

APT30M70BVRG

MOSFET N-CH 300V 48A TO247

Microchip Technology

101 -
Datasheet POWER MOS V® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 300 V 48A (Tc) 10V 70mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V ±30V 5870 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
MSC035SMA070B4 Microchip Technology

MSC035SMA070B4

TRANS SJT N-CH 700V 77A TO247-4

Microchip Technology

136 -
Datasheet - TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 77A (Tc) 20V 44mOhm @ 30A, 20V 2.7V @ 2mA (Typ) 99 nC @ 20 V +23V, -10V 2010 pF @ 700 V - 283W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
VP2206N2 Microchip Technology

VP2206N2

MOSFET P-CH 60V 750MA TO39

Microchip Technology

919 -
Datasheet - TO-205AD, TO-39-3 Metal Can Bag Active P-Channel MOSFET (Metal Oxide) 60 V 750mA (Tj) 5V, 10V 900mOhm @ 3.5A, 10V 3.5V @ 10mA - ±20V 450 pF @ 25 V - 360mW (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
APT60N60BCSG Microchip Technology

APT60N60BCSG

MOSFET N-CH 600V 60A TO247

Microchip Technology

132 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.9V @ 3mA 190 nC @ 10 V ±30V 7200 pF @ 25 V - 431W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 [B]
MSC025SMA120S Microchip Technology

MSC025SMA120S

SICFET N-CH 1.2KV 100A D3PAK

Microchip Technology

127 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
APT50M38JLL Microchip Technology

APT50M38JLL

MOSFET N-CH 500V 88A ISOTOP

Microchip Technology

89 -
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 500 V 88A (Tc) 10V 38mOhm @ 44A, 10V 5V @ 5mA 270 nC @ 10 V ±30V 12000 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
APT10021JFLL Microchip Technology

APT10021JFLL

MOSFET N-CH 1000V 37A ISOTOP

Microchip Technology

56 -
Datasheet POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 210mOhm @ 18.5A, 10V 5V @ 5mA 395 nC @ 10 V ±30V 9750 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount ISOTOP®
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FETs, MOSFETs FAQ

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