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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
APT12040JVR Microchip Technology

APT12040JVR

MOSFET N-CH 1200V 26A SOT227

Microchip Technology

43 -
Datasheet POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 10V 400mOhm @ 13A, 10V 4V @ 5mA 1200 nC @ 10 V ±30V 18000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227 (ISOTOP®)
MSCSM120SKM31CTBL1NG Microchip Technology

MSCSM120SKM31CTBL1NG

PM-MOSFET-SIC-SBD-BL1

Microchip Technology

31 -
Datasheet - Module Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 79A 20V 31mOhm @ 40A, 20V 2.8V @ 1mA 232 nC @ 20 V +25V, -10V 3020 pF @ 1000 V - 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
VN2222LL-G-P003 Microchip Technology

VN2222LL-G-P003

MOSFET N-CH 60V 230MA TO92-3

Microchip Technology

2,004 -
Datasheet - TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 230mA (Tj) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 1mA - ±30V 60 pF @ 25 V - 400mW (Ta), 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
DN2535N3-G-P003 Microchip Technology

DN2535N3-G-P003

MOSFET N-CH 350V 120MA TO92

Microchip Technology

1,981 -
Datasheet - TO-226-3, TO-92-3 (TO-226AA) Tape & Reel (TR) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 350 V 120mA (Tj) 0V 25Ohm @ 120mA, 0V - - ±20V 300 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92 (TO-226)
VN0300L-G-P002 Microchip Technology

VN0300L-G-P002

MOSFET N-CH 30V 640MA TO92-3

Microchip Technology

1,874 -
Datasheet - TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 640mA (Tj) 5V, 10V 1.2Ohm @ 1A, 10V 2.5V @ 1mA - ±30V 190 pF @ 20 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
APT9M100S/TR Microchip Technology

APT9M100S/TR

MOSFET MOS8 1000 V 9 A TO-268

Microchip Technology

324 -
Datasheet POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1000 V 9A (Tc) 10V 1.4Ohm @ 5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2605 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
APT7F120S Microchip Technology

APT7F120S

MOSFET N-CH 1200V 7A D3PAK

Microchip Technology

240 -
Datasheet POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 7A (Tc) 10V 2.4Ohm @ 3A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2565 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D3PAK
MSC090SMA070S Microchip Technology

MSC090SMA070S

SICFET N-CH 700V D3PAK

Microchip Technology

103 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel SiCFET (Silicon Carbide) 700 V 25A (Tc) - - - - - - - - -55°C ~ 175°C (TJ) - - Surface Mount D3PAK
MSC180SMA120B Microchip Technology

MSC180SMA120B

MOSFET 1200V 25A TO-247

Microchip Technology

105 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 21A (Tc) 5V, 20V 225mOhm @ 8A, 20V 4.5V @ 500µA 36 nC @ 20 V +23V, -10V 530 pF @ 1000 V - 147W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
MSC040SMA120S/TR Microchip Technology

MSC040SMA120S/TR

MOSFET SIC 1200 V 40 MOHM TO-268

Microchip Technology

397 -
Datasheet - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 303W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
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FETs, MOSFETs FAQ

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