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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TQM019NH04LCR RLG Taiwan Semiconductor Corporation

TQM019NH04LCR RLG

40V, 100A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

4,995 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TQM019NH04CR RLG Taiwan Semiconductor Corporation

TQM019NH04CR RLG

40V, 100A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

4,980 -
Datasheet PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta), 100A (Tc) 7V, 10V 1.9mOhm @ 50A, 10V 3.6V @ 250µA 134 nC @ 10 V ±20V 9044 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 8-PDFNU (4.9x5.75)
TSM60NE200CIT C0G Taiwan Semiconductor Corporation

TSM60NE200CIT C0G

MOSFET

Taiwan Semiconductor Corporation

2,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V, 12V 185mOhm @ 4A, 12V 6V @ 1.65mA 30 nC @ 10 V ±30V 1238 pF @ 300 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
TSM190N08CZ C0G Taiwan Semiconductor Corporation

TSM190N08CZ C0G

MOSFET N-CHANNEL 75V 190A TO220

Taiwan Semiconductor Corporation

3,980 -
Datasheet - TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 190A (Tc) 10V 4.2mOhm @ 90A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 8600 pF @ 30 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM60NE180CIT C0G Taiwan Semiconductor Corporation

TSM60NE180CIT C0G

600V, 13A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

2,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V, 12V 165mOhm @ 4.3A, 12V 6V @ 1.8mA 34 nC @ 10 V ±30V 1417 pF @ 300 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
TSM600NA25CIT C0G Taiwan Semiconductor Corporation

TSM600NA25CIT C0G

250V 22A SINGLE N-CHAN

Taiwan Semiconductor Corporation

3,897 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 250 V 22A (Tc) 10V 60mOhm @ 11A, 10V 4.2V @ 250µA 71 nC @ 10 V ±30V 3086 pF @ 125 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
TSM60NC196CM2 RNG Taiwan Semiconductor Corporation

TSM60NC196CM2 RNG

600V, 28A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

2,394 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 39 nC @ 10 V ±20V 1566 pF @ 300 V - 152W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AB (D2PAK)
TSM60NE145CIT C0G Taiwan Semiconductor Corporation

TSM60NE145CIT C0G

MOSFET

Taiwan Semiconductor Corporation

2,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 14.5A (Tc) 10V, 12V 135mOhm @ 4.8A, 12V 6V @ 2mA 40 nC @ 10 V ±30V 1661 pF @ 300 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
TSM60NE110CIT C0G Taiwan Semiconductor Corporation

TSM60NE110CIT C0G

600V, 17A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

2,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V, 12V 100mOhm @ 5.6A, 12V 6V @ 2.5mA 55 nC @ 10 V ±30V 2330 pF @ 300 V - 73W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
TSM60NE084PW C0G Taiwan Semiconductor Corporation

TSM60NE084PW C0G

600V, 42A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

300 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V, 12V 80mOhm @ 14A, 12V 6V @ 2.9mA 68 nC @ 10 V ±30V 2939 pF @ 300 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
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FETs, MOSFETs FAQ

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