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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TSM60NE069CIT C0G Taiwan Semiconductor Corporation

TSM60NE069CIT C0G

600V, 24A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

2,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V, 12V 60mOhm @ 8A, 12V 6V @ 3.5mA 89 nC @ 10 V ±30V 3551 pF @ 300 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
TSM60NE084CIT C0G Taiwan Semiconductor Corporation

TSM60NE084CIT C0G

600V, 21A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

2,000 -
Datasheet - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V, 12V 82mOhm @ 7A, 12V 6V @ 2.9mA 69 nC @ 10 V ±30V 2930 pF @ 300 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
TSG65N190CR RVG Taiwan Semiconductor Corporation

TSG65N190CR RVG

650V, 11A, PDFN56, E-MODE GAN TR

Taiwan Semiconductor Corporation

2,999 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TSM60NE069PW C0G Taiwan Semiconductor Corporation

TSM60NE069PW C0G

600V, 51A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

295 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V, 12V 60mOhm @ 17A, 12V 6V @ 3.5mA 86 nC @ 10 V ±30V 3566 pF @ 300 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
TSG65N195CE RVG Taiwan Semiconductor Corporation

TSG65N195CE RVG

650V, 11A, PDFN88, E-MODE GAN TR

Taiwan Semiconductor Corporation

3,000 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TSM60NE048PW C0G Taiwan Semiconductor Corporation

TSM60NE048PW C0G

MOSFET

Taiwan Semiconductor Corporation

300 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) 10V, 12V 44mOhm @ 20A, 12V 6V @ 4.6mA 114 nC @ 10 V ±30V 5023 pF @ 300 V - 431W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
TSG65N110CE RVG Taiwan Semiconductor Corporation

TSG65N110CE RVG

650V, 18A, PDFN88, E-MODE GAN TR

Taiwan Semiconductor Corporation

3,000 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TSG65N068CE RVG Taiwan Semiconductor Corporation

TSG65N068CE RVG

650V, 30A, PDFN88, E-MODE GAN TR

Taiwan Semiconductor Corporation

2,962 -
Datasheet * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
TSM9435CS RLG Taiwan Semiconductor Corporation

TSM9435CS RLG

MOSFET P-CHANNEL 30V 5.3A 8SOP

Taiwan Semiconductor Corporation

1,138 -
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5.3A (Tc) 4.5V, 10V 60mOhm @ 5.3A, 10V 3V @ 250µA 27 nC @ 10 V ±20V 551.57 pF @ 15 V - 5.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
TSM080N03EPQ56 RLG Taiwan Semiconductor Corporation

TSM080N03EPQ56 RLG

MOSFET N-CH 30V 55A 8PDFN

Taiwan Semiconductor Corporation

4,057 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 8mOhm @ 16A, 10V 2.5V @ 250µA 7.5 nC @ 4.5 V ±20V 750 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
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FETs, MOSFETs FAQ

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