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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TSM60NB900CH Taiwan Semiconductor Corporation

TSM60NB900CH

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,171 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM60NB900CP Taiwan Semiconductor Corporation

TSM60NB900CP

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

4,003 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 900mOhm @ 1.2A, 10V 4V @ 250µA 9.6 nC @ 10 V ±30V 315 pF @ 100 V - 36.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM088NA03CR RLG Taiwan Semiconductor Corporation

TSM088NA03CR RLG

MOSFET N-CH 30V 61A 8PDFN

Taiwan Semiconductor Corporation

4,259 -
Datasheet - 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 8.8mOhm @ 13A, 10V 2.5V @ 250µA 12.6 nC @ 10 V ±20V 750 pF @ 15 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
TSM70NB1R4CP Taiwan Semiconductor Corporation

TSM70NB1R4CP

700V, 3A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,653 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 3A (Tc) 10V 1.4Ohm @ 1.2A, 10V 4V @ 250µA 7.4 nC @ 10 V ±30V 317 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM500N15CS Taiwan Semiconductor Corporation

TSM500N15CS

150V, 11A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

6,353 -
Datasheet - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 11A (Tc) 10V 50mOhm @ 4A, 10V 4V @ 250µA 20.5 nC @ 10 V ±20V 1123 pF @ 80 V - 12.7W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
TSM8N80CZ C0G Taiwan Semiconductor Corporation

TSM8N80CZ C0G

MOSFET N-CHANNEL 800V 8A TO220

Taiwan Semiconductor Corporation

3,171 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.05Ohm @ 4A, 10V 4V @ 250µA 41 nC @ 10 V ±30V 1921 pF @ 25 V - 40.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM2N60ECP ROG Taiwan Semiconductor Corporation

TSM2N60ECP ROG

MOSFET N-CHANNEL 600V 2A TO252

Taiwan Semiconductor Corporation

7,696 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4Ohm @ 1A, 10V 5V @ 250µA 9.5 nC @ 10 V ±30V 362 pF @ 25 V - 52.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM60N600CH C5G Taiwan Semiconductor Corporation

TSM60N600CH C5G

MOSFET N-CHANNEL 600V 8A TO251

Taiwan Semiconductor Corporation

8,534 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 600mOhm @ 4A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 743 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM2N100CH C5G Taiwan Semiconductor Corporation

TSM2N100CH C5G

MOSFET N-CH 1000V 1.85A TO251

Taiwan Semiconductor Corporation

3,322 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 1.85A (Tc) 10V 8.5Ohm @ 900mA, 10V 5.5V @ 250µA 17 nC @ 10 V ±30V 625 pF @ 25 V - 77W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM80N1R2CH C5G Taiwan Semiconductor Corporation

TSM80N1R2CH C5G

MOSFET N-CH 800V 5.5A TO251

Taiwan Semiconductor Corporation

7,440 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
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FETs, MOSFETs FAQ

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Use the available manufacturer and technical filters to compare matching parts by specifications, stock status, pricing and datasheet information.

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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