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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
TSM80N1R2CI C0G Taiwan Semiconductor Corporation

TSM80N1R2CI C0G

MOSFET N-CH 800V 5.5A ITO220AB

Taiwan Semiconductor Corporation

7,360 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 1.8A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB
TSM80N950CI C0G Taiwan Semiconductor Corporation

TSM80N950CI C0G

MOSFET N-CH 800V 6A ITO220AB

Taiwan Semiconductor Corporation

2,369 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 2A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 691 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB
TSM035NB04LCZ Taiwan Semiconductor Corporation

TSM035NB04LCZ

40V, 157A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

9,964 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 157A (Tc) 4.5V, 10V 3.5mOhm @ 18A, 10V 2.5V @ 250µA 111 nC @ 10 V ±20V 6350 pF @ 20 V - 2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM60NB600CP Taiwan Semiconductor Corporation

TSM60NB600CP

600V, 7A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

4,384 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 2.1A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 516 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM60NB600CH Taiwan Semiconductor Corporation

TSM60NB600CH

600V, 7A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

6,031 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 2.1A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 516 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM60N380CH C5G Taiwan Semiconductor Corporation

TSM60N380CH C5G

MOSFET N-CH 600V 11A TO251

Taiwan Semiconductor Corporation

3,773 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 20.5 nC @ 10 V ±30V 1040 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
TSM80N1R2CL C0G Taiwan Semiconductor Corporation

TSM80N1R2CL C0G

MOSFET N-CH 800V 5.5A TO262S

Taiwan Semiconductor Corporation

2,613 -
Datasheet - TO-262-3 Short Leads, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 1.8A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262S (I2PAK)
TSM70N10CP ROG Taiwan Semiconductor Corporation

TSM70N10CP ROG

MOSFET N-CHANNEL 100V 70A TO252

Taiwan Semiconductor Corporation

7,867 -
Datasheet - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 10V 13mOhm @ 30A, 10V 4V @ 250µA 145 nC @ 10 V ±20V 4300 pF @ 30 V - 120W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
TSM043NB04LCZ Taiwan Semiconductor Corporation

TSM043NB04LCZ

40V, 124A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

7,567 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 124A (Tc) 4.5V, 10V 4.3mOhm @ 16A, 10V 2.5V @ 250µA 76 nC @ 10 V ±20V 4387 pF @ 20 V - 2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
TSM10N80CZ C0G Taiwan Semiconductor Corporation

TSM10N80CZ C0G

MOSFET N-CH 800V 9.5A TO220

Taiwan Semiconductor Corporation

3,878 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 800 V 9.5A (Tc) 10V 1.05Ohm @ 4.75A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 2336 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
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FETs, MOSFETs FAQ

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Yes. Send the manufacturer part number and required quantity to our sourcing team for availability, lead-time and alternative sourcing support.

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