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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AC3M0120065D APSEMI

AC3M0120065D

SIC MOSFET N-CH 650V 23A TO247-3

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 23A 15V 157mOhm @ 6.76A, 15V 3.6V @ 1.86mA - +19V, -8V - - 98W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
AC3M0120090D APSEMI

AC3M0120090D

SIC MOSFET N-CH 900V 24A TO247-3

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 24A 15V 155mOhm @ 15A, 15V 3.5V @ 3mA - +19V, -8V - - 97W (Tc) -55°C ~ 150°C - - Through Hole TO-247-3
AC3M0075120D APSEMI

AC3M0075120D

SIC MOSFET N-CH 1200V 33A TO247-

APSEMI

1,000

1+:$4.97000

10+:$4.64100

60+:$3.71267

240+:$3.01325

450+:$2.51104

900+:$2.31016

Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 33A 15V 90mOhm @ 20A, 15V 3.6V @ 5mA - +19V, -8V - - 136W -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
AC3M0060065K APSEMI

AC3M0060065K

SIC MOSFET N-CH 650V 38A TO247-4

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA - +19V, -8V - - 150W -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0060065D APSEMI

AC3M0060065D

SIC MOSFET N-CH 650V 30A TO247-3

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 30A 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA - +19V, -8V - - 150W -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
AC3M0045065D APSEMI

AC3M0045065D

SIC MOSFET N-CH 650V 50A TO247-3

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 50A 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA - +19V, -8V - - 176W -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
AC3M0045065K APSEMI

AC3M0045065K

SIC MOSFET N-CH 650V 50A TO247-4

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 50A 15V 60mOhm @ 17.6A, 15V 3.6V @ 4.84mA - +19V, -8V - - 176W -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0040120K APSEMI

AC3M0040120K

SIC MOSFET N-CH 1200V 67A TO247-

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 67A 15V 53.5mOhm @ 33.3A, 15V 3.6V @ 9.2mA - +19V, -8V - - 326W -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC2M0040120D APSEMI

AC2M0040120D

SIC MOSFET N-CH 1200V 57A TO247-

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 57A 20V 52mOhm @ 40A, 20V 4V @ 10mA - +25V, -10V - - 278W (Tc) -55°C ~ 150°C - - Through Hole TO-247-3
AC3M0040120D APSEMI

AC3M0040120D

SIC MOSFET N-CH 1200V 67A TO247-

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 67A 15V 53.5mOhm @ 33.3A, 15V 3.6V @ 9.5mA - +19V, -8V - - 326W -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
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