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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
AC3M0032120D APSEMI

AC3M0032120D

SIC MOSFET N-CH 1200V 64A TO247-

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A 15V 43mOhm @ 40A, 15V 3.6V @ 11.5mA - +19V, -8V - - 283W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
AC3M0065090D APSEMI

AC3M0065090D

SIC MOSFET N-CH 900V 37A TO247-3

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 37A 15V 78mOhm @ 20A, 15V 3.5V @ 5mA - +19V, -8V - - 125W -55°C ~ 150°C - - Through Hole TO-247-3
AC3M0065100K APSEMI

AC3M0065100K

SIC MOSFET N-CH 1000V 33A TO247-

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1000 V 33A 15V 78mOhm @ 20A, 15V 3.5V @ 5mA - +19V, -8V - - 113.5W (Tc) -55°C ~ 150°C - - Through Hole TO-247-4
AC3M0032120K APSEMI

AC3M0032120K

SIC MOSFET N-CH 1200V 64A TO247-

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A 15V 43mOhm @ 40A, 15V 3.6V @ 11.5mA - +19V, -8V - - 283W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0025065K APSEMI

AC3M0025065K

SIC MOSFET N-CH 650V 74A TO247-4

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 74A 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA - +19V, -8V - - 326W -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0030090K APSEMI

AC3M0030090K

SIC MOSFET N-CH 900V 74A TO247-4

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 74A 15V 39mOhm @ 35A, 15V 3.5V @ 11mA - +19V, -8V - - 240W -40°C ~ 150°C (TJ) - - Through Hole TO-247-4
AC2M0025120D APSEMI

AC2M0025120D

SIC MOSFET N-CH 1200V 92A TO247-

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 92A 20V 34mOhm @ 50A, 20V 4V @ 15mA - +25V, -10V - - 378W (Tc) -55°C ~ 150°C - - Through Hole TO-247-3
AC3M0025065D APSEMI

AC3M0025065D

SIC MOSFET N-CH 650V 98A TO247-3

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 98A 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA - +19V, -8V - - 326W -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
AC3M0021120K APSEMI

AC3M0021120K

SIC MOSFET N-CH 1200V 102A TO247

APSEMI

10,000 -
Datasheet * TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 102A (Tc) 15V 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA - +19V, -8V - - 469W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-4
AC3M0021120D APSEMI

AC3M0021120D

SIC MOSFET N-CH 1200V 117A TO247

APSEMI

10,000 -
Datasheet * TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 82A 15V 28.8mOhm @ 50A, 15V 3.6V @ 17.7mA - +19V, -8V - - 469W (Tc) -40°C ~ 175°C (TJ) - - Through Hole TO-247-3
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FETs, MOSFETs FAQ

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