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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIDR610DP-T1-GE3 Vishay Siliconix

SIDR610DP-T1-GE3

MOSFET N-CH 200V 8.9A/39.6A PPAK

Vishay Siliconix

8,231 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 8.9A (Ta), 39.6A (Tc) 7.5V, 10V 31.9mOhm @ 10A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 1380 pF @ 100 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
SIHP11N80E-GE3 Vishay Siliconix

SIHP11N80E-GE3

MOSFET N-CH 800V 12A TO220AB

Vishay Siliconix

11 -
Datasheet E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHG33N60E-GE3 Vishay Siliconix

SIHG33N60E-GE3

MOSFET N-CH 600V 33A TO247AC

Vishay Siliconix

2,776 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SIHW33N60E-GE3 Vishay Siliconix

SIHW33N60E-GE3

MOSFET N-CH 600V 33A TO247AD

Vishay Siliconix

9,352 -
Datasheet - TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AD
SIHP33N60EF-GE3 Vishay Siliconix

SIHP33N60EF-GE3

MOSFET N-CH 600V 33A TO220AB

Vishay Siliconix

2,644 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 98mOhm @ 16.5A, 10V 4V @ 250µA 155 nC @ 10 V ±30V 3454 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SIHH20N50E-T1-GE3 Vishay Siliconix

SIHH20N50E-T1-GE3

MOSFET N-CH 500V 22A PPAK 8 X 8

Vishay Siliconix

5,445 -
Datasheet E 8-PowerTDFN Tube Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 147mOhm @ 10A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2063 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHA17N80E-E3 Vishay Siliconix

SIHA17N80E-E3

MOSFET N-CHANNEL 800V 15A TO220

Vishay Siliconix

4 -
Datasheet E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
SIHH180N60E-T1-GE3 Vishay Siliconix

SIHH180N60E-T1-GE3

MOSFET N-CH 600V 19A PPAK 8 X 8

Vishay Siliconix

4,161 -
Datasheet E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHB17N80E-T1-GE3 Vishay Siliconix

SIHB17N80E-T1-GE3

MOSFET N-CH 800V 15A D2PAK

Vishay Siliconix

3,339 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHG17N80E-GE3 Vishay Siliconix

SIHG17N80E-GE3

MOSFET N-CH 800V 15A TO247AC

Vishay Siliconix

9,071 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
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FETs, MOSFETs FAQ

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