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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SIHB065N60E-GE3 Vishay Siliconix

SIHB065N60E-GE3

MOSFET N-CH 600V 40A D2PAK

Vishay Siliconix

5,229 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 65mOhm @ 16A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 2700 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHH120N60E-T1-GE3 Vishay Siliconix

SIHH120N60E-T1-GE3

MOSFET N-CH 600V 24A PPAK 8 X 8

Vishay Siliconix

9,851 -
Datasheet E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 44 nC @ 10 V ±30V 1600 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHB33N60ET1-GE3 Vishay Siliconix

SIHB33N60ET1-GE3

MOSFET N-CH 600V 33A TO263

Vishay Siliconix

5,089 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHB35N60EF-GE3 Vishay Siliconix

SIHB35N60EF-GE3

MOSFET N-CH 600V 32A D2PAK

Vishay Siliconix

6,980 -
Datasheet EF TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 97mOhm @ 17A, 10V 4V @ 250µA 134 nC @ 10 V ±30V 2568 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHH27N60EF-T1-GE3 Vishay Siliconix

SIHH27N60EF-T1-GE3

MOSFET N-CH 600V 29A PPAK 8 X 8

Vishay Siliconix

9,368 -
Datasheet E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 100mOhm @ 13.5A, 10V 4V @ 250µA 135 nC @ 10 V ±30V 2609 pF @ 100 V - 202W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHG80N60E-GE3 Vishay Siliconix

SIHG80N60E-GE3

MOSFET N-CH 600V 80A TO247AC

Vishay Siliconix

2,363 -
Datasheet E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 80A (Tc) 10V 30mOhm @ 40A, 10V 4V @ 250µA 443 nC @ 10 V ±30V 6900 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
SQAA42CEJW-T1_GE3 Vishay Siliconix

SQAA42CEJW-T1_GE3

AUTOMOTIVE N-CHANNEL 60V (D-S)

Vishay Siliconix

8,139 -
Datasheet TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4.5V, 10V 30mOhm @ 4.5A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 590 pF @ 25 V - 13.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PowerPAK®SC-70W-6
SQA460CEJW-T1_GE3 Vishay Siliconix

SQA460CEJW-T1_GE3

AUTOMOTIVE N-CHANNEL 60V (D-S) 1

Vishay Siliconix

9,291 -
Datasheet TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Tc) 4.5V, 10V 57mOhm @ 5A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 750 pF @ 30 V - 13.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PowerPAK®SC-70W-6
SQ2318BES-T1_GE3 Vishay Siliconix

SQ2318BES-T1_GE3

MOSFET N-CH 40V 8A SOT23-3

Vishay Siliconix

9,533 -
Datasheet TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 40 V 8A (Tc) 4.5V, 10V 26.3mOhm @ 4A, 10V 2.5V @ 250µA 9.4 nC @ 10 V ±20V 500 pF @ 25 V - 3W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-3 (TO-236)
SIRA06DDP-T1-UE3 Vishay Siliconix

SIRA06DDP-T1-UE3

N-CHANNEL 30 V (D-S) 150C MOSFET

Vishay Siliconix

2,672 -
Datasheet TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 36A (Ta), 125A (Tc) 4.5V, 10V 2.2mOhm @ 15A, 10V 2.2V @ 250µA 46 nC @ 10 V +20V, -16V 2330 pF @ 15 V - 4.6W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
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FETs, MOSFETs FAQ

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