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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SI4486EY-T1-GE3 Vishay Siliconix

SI4486EY-T1-GE3

MOSFET N-CH 100V 5.4A 8SO

Vishay Siliconix

8,211 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.4A (Ta) 6V, 10V 25mOhm @ 7.9A, 10V 2V @ 250µA (Min) 44 nC @ 10 V ±20V - - 1.8W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
SI7411DN-T1-E3 Vishay Siliconix

SI7411DN-T1-E3

MOSFET P-CH 20V 7.5A PPAK1212-8

Vishay Siliconix

3,514 -
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 1.8V, 4.5V 19mOhm @ 11.4A, 4.5V 1V @ 300µA 41 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
SUM90N08-7M6P-E3 Vishay Siliconix

SUM90N08-7M6P-E3

MOSFET N-CH 75V 90A TO263

Vishay Siliconix

7,414 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 90A (Tc) 10V 7.6mOhm @ 30A, 10V 4.8V @ 250µA 90 nC @ 10 V ±20V 3528 pF @ 30 V - 3.75W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIE860DF-T1-E3 Vishay Siliconix

SIE860DF-T1-E3

MOSFET N-CH 30V 60A 10POLARPAK

Vishay Siliconix

5,507 -
Datasheet TrenchFET® 10-PolarPAK® (M) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 2.1mOhm @ 21.7A, 10V 2.5V @ 250µA 105 nC @ 10 V ±20V 4500 pF @ 15 V - 5.2W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (M)
IRF730SPBF Vishay Siliconix

IRF730SPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix

6,024 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF830LPBF Vishay Siliconix

IRF830LPBF

MOSFET N-CH 500V 4.5A TO262-3

Vishay Siliconix

4,937 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262-3
SIHB4N80E-GE3 Vishay Siliconix

SIHB4N80E-GE3

MOSFET N-CH 800V 4.3A D2PAK

Vishay Siliconix

9,159 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI7636DP-T1-GE3 Vishay Siliconix

SI7636DP-T1-GE3

MOSFET N-CH 30V 17A PPAK SO-8

Vishay Siliconix

2,040 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 4mOhm @ 25A, 10V 3V @ 250µA 50 nC @ 4.5 V ±20V 5600 pF @ 15 V - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRF640L Vishay Siliconix

IRF640L

MOSFET N-CH 200V 18A I2PAK

Vishay Siliconix

4,507 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
IRFBF20PBF-BE3 Vishay Siliconix

IRFBF20PBF-BE3

MOSFET N-CH 900V 1.7A TO220AB

Vishay Siliconix

7,183 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) - 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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FETs, MOSFETs FAQ

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