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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRF730STRLPBF Vishay Siliconix

IRF730STRLPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix

6,565 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHG28N65EF-GE3 Vishay Siliconix

SIHG28N65EF-GE3

MOSFET N-CH 650V 28A TO247AC

Vishay Siliconix

7,306 -
Datasheet - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 28A (Tc) 10V 117mOhm @ 14A, 10V 4V @ 250µA 146 nC @ 10 V ±30V 3249 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFI740G Vishay Siliconix

IRFI740G

MOSFET N-CH 400V 5.4A TO220-3

Vishay Siliconix

9,212 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.4A (Tc) 10V 550mOhm @ 3.2A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1370 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IRFP460P Vishay Siliconix

IRFP460P

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix

2,979 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) - 270mOhm @ 12A, 10V 4V @ 250µA 210 nC @ 10 V - 4200 pF @ 25 V - - -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFPC50LCPBF Vishay Siliconix

IRFPC50LCPBF

MOSFET N-CH 600V 11A TO247-3

Vishay Siliconix

9,261 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 600mOhm @ 6.6A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2300 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFS11N50A Vishay Siliconix

IRFS11N50A

MOSFET N-CH 500V 11A D2PAK

Vishay Siliconix

3,597 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFS11N50ATRL Vishay Siliconix

IRFS11N50ATRL

MOSFET N-CH 500V 11A D2PAK

Vishay Siliconix

8,027 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRL640S Vishay Siliconix

IRL640S

MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix

7,833 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF840LCS Vishay Siliconix

IRF840LCS

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

3,582 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRF840LCL Vishay Siliconix

IRF840LCL

MOSFET N-CH 500V 8A I2PAK

Vishay Siliconix

8,411 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK
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FETs, MOSFETs FAQ

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