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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRLZ44S Vishay Siliconix

IRLZ44S

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix

4,788 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRLZ44STRR Vishay Siliconix

IRLZ44STRR

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix

8,915 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRFBC30ASTRL Vishay Siliconix

IRFBC30ASTRL

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix

4,209 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IRLZ44STRL Vishay Siliconix

IRLZ44STRL

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix

8,303 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIHJ7N65E-T1-GE3 Vishay Siliconix

SIHJ7N65E-T1-GE3

MOSFET N-CH 650V 7.9A PPAK SO-8

Vishay Siliconix

4,144 -
Datasheet - PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 7.9A (Tc) 10V 598mOhm @ 3.5A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 820 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRFIB8N50K Vishay Siliconix

IRFIB8N50K

MOSFET N-CH 500V 6.7A TO220-3

Vishay Siliconix

6,524 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.7A (Tc) 10V 350mOhm @ 4A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2160 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
SUM47N10-24L-E3 Vishay Siliconix

SUM47N10-24L-E3

MOSFET N-CH 100V 47A TO263

Vishay Siliconix

5,700 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 4.5V, 10V 24mOhm @ 40A, 10V 3V @ 250µA 60 nC @ 10 V ±20V 2400 pF @ 25 V - 3.75W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIE810DF-T1-E3 Vishay Siliconix

SIE810DF-T1-E3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix

8,813 -
Datasheet TrenchFET® 10-PolarPAK® (L) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.4mOhm @ 25A, 10V 2V @ 250µA 300 nC @ 10 V ±12V 13000 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (L)
SI7186DP-T1-GE3 Vishay Siliconix

SI7186DP-T1-GE3

MOSFET N-CH 80V 32A PPAK SO-8

Vishay Siliconix

2,618 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80 V 32A (Tc) 10V 12.5mOhm @ 10A, 10V 4.5V @ 250µA 70 nC @ 10 V ±20V 2840 pF @ 40 V - 5.2W (Ta), 64W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIE810DF-T1-GE3 Vishay Siliconix

SIE810DF-T1-GE3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix

8,649 -
Datasheet TrenchFET® 10-PolarPAK® (L) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.4mOhm @ 25A, 10V 2V @ 250µA 300 nC @ 10 V ±12V 13000 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 10-PolarPAK® (L)
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FETs, MOSFETs FAQ

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