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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFZ44PBF-BE3 Vishay Siliconix

IRFZ44PBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix

680 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF9640PBF-BE3 Vishay Siliconix

IRF9640PBF-BE3

MOSFET P-CH 200V 11A TO220AB

Vishay Siliconix

135 -
Datasheet - TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SI4124DY-T1-GE3 Vishay Siliconix

SI4124DY-T1-GE3

MOSFET N-CH 40V 20.5A 8SO

Vishay Siliconix

2,507 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 20.5A (Tc) 4.5V, 10V 7.5mOhm @ 14A, 10V 3V @ 250µA 77 nC @ 10 V ±20V 3540 pF @ 20 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SUP70060E-GE3 Vishay Siliconix

SUP70060E-GE3

MOSFET N-CH 100V 131A TO220AB

Vishay Siliconix

384 -
Datasheet ThunderFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 131A (Tc) 7.5V, 10V 5.8mOhm @ 30A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 3330 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRFBF20SPBF Vishay Siliconix

IRFBF20SPBF

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix

581 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIR512DP-T1-RE3 Vishay Siliconix

SIR512DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

7,329 -
Datasheet - PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 25.1A (Ta), 100A (Tc) 7.5V, 10V 4.5mOhm @ 20A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 3400 pF @ 50 V - 6W (Ta), 96.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRF9630SPBF Vishay Siliconix

IRF9630SPBF

MOSFET P-CH 200V 6.5A D2PAK

Vishay Siliconix

3,550 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI7110DN-T1-GE3 Vishay Siliconix

SI7110DN-T1-GE3

MOSFET N-CH 20V 13.5A PPAK1212-8

Vishay Siliconix

5,255 -
Datasheet TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 13.5A (Ta) 4.5V, 10V 5.3mOhm @ 21.1A, 10V 2.5V @ 250µA 21 nC @ 4.5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8
IRFI9Z14GPBF Vishay Siliconix

IRFI9Z14GPBF

MOSFET P-CH 60V 5.3A TO220-3

Vishay Siliconix

1,760 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active P-Channel MOSFET (Metal Oxide) 60 V 5.3A (Tc) 10V 500mOhm @ 3.2A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IRFI510GPBF Vishay Siliconix

IRFI510GPBF

MOSFET N-CH 100V 4.5A TO220-3

Vishay Siliconix

919 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 540mOhm @ 2.7A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
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FETs, MOSFETs FAQ

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