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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
SUD35N10-26P-GE3 Vishay Siliconix

SUD35N10-26P-GE3

MOSFET N-CH 100V 35A TO252

Vishay Siliconix

1,914 -
Datasheet TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 7V, 10V 26mOhm @ 12A, 10V 4.4V @ 250µA 47 nC @ 10 V ±20V 2000 pF @ 12 V - 8.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
SIHB11N80AE-GE3 Vishay Siliconix

SIHB11N80AE-GE3

MOSFET N-CH 800V 8A D2PAK

Vishay Siliconix

972 -
Datasheet E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 450mOhm @ 5.5A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 804 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI4490DY-T1-E3 Vishay Siliconix

SI4490DY-T1-E3

MOSFET N-CH 200V 2.85A 8SO

Vishay Siliconix

2,029 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 2.85A (Ta) 6V, 10V 80mOhm @ 4A, 10V 2V @ 250µA (Min) 42 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SIHP15N50E-BE3 Vishay Siliconix

SIHP15N50E-BE3

N-CHANNEL 500V

Vishay Siliconix

1,829 -
Datasheet - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SQM50034EL_GE3 Vishay Siliconix

SQM50034EL_GE3

MOSFET N-CH 60V 100A TO263

Vishay Siliconix

460 -
Datasheet TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 3.9mOhm @ 20A, 10V 2.5V @ 250µA 90 nC @ 10 V ±20V 6100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263 (D2PAK)
IRF830ASPBF Vishay Siliconix

IRF830ASPBF

MOSFET N-CH 500V 5A D2PAK

Vishay Siliconix

138 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SI4488DY-T1-E3 Vishay Siliconix

SI4488DY-T1-E3

MOSFET N-CH 150V 3.5A 8SO

Vishay Siliconix

4,291 -
Datasheet TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Ta) 10V 50mOhm @ 5A, 10V 2V @ 250µA (Min) 36 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SIR846ADP-T1-GE3 Vishay Siliconix

SIR846ADP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix

5,900 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 6V, 10V 7.8mOhm @ 20A, 10V 3V @ 250µA 66 nC @ 10 V ±20V 2350 pF @ 50 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIR870ADP-T1-RE3 Vishay Siliconix

SIR870ADP-T1-RE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix

2,583 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 4.5V, 10V 6.6mOhm @ 20A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 2866 pF @ 50 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRFI9634GPBF Vishay Siliconix

IRFI9634GPBF

MOSFET P-CH 250V 4.1A TO220-3

Vishay Siliconix

2,848 -
Datasheet - TO-220-3 Full Pack, Isolated Tab Tube Active P-Channel MOSFET (Metal Oxide) 250 V 4.1A (Tc) 10V 1Ohm @ 2.5A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
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FETs, MOSFETs FAQ

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