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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
2N6660JTXP02 Vishay Siliconix

2N6660JTXP02

MOSFET N-CH 60V 990MA TO205AD

Vishay Siliconix

4,383 -
Datasheet - TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 990mA (Tc) 5V, 10V 3Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AD (TO-39)
2N6661JTX02 Vishay Siliconix

2N6661JTX02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

4,689 -
Datasheet - TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
2N6661JTXP02 Vishay Siliconix

2N6661JTXP02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

2,473 -
Datasheet - TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
2N6661JTVP02 Vishay Siliconix

2N6661JTVP02

MOSFET N-CH 90V 860MA TO39

Vishay Siliconix

4,205 -
Datasheet - TO-205AD, TO-39-3 Metal Can Tube Obsolete N-Channel MOSFET (Metal Oxide) 90 V 860mA (Tc) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 25 V - 725mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-39
SI7454DP-T1-E3 Vishay Siliconix

SI7454DP-T1-E3

MOSFET N-CH 100V 5A PPAK SO-8

Vishay Siliconix

6,664 -
Datasheet TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5A (Ta) 6V, 10V 34mOhm @ 7.8A, 10V 4V @ 250µA 30 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
IRF510 Vishay Siliconix

IRF510

MOSFET N-CH 100V 5.6A TO220AB

Vishay Siliconix

4,208 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF9510 Vishay Siliconix

IRF9510

MOSFET P-CH 100V 4A TO220AB

Vishay Siliconix

6,857 -
Datasheet - TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF840 Vishay Siliconix

IRF840

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix

3,663 -
Datasheet - TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRFD110 Vishay Siliconix

IRFD110

MOSFET N-CH 100V 1A 4DIP

Vishay Siliconix

3,745 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 10V 540mOhm @ 600mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-HVMDIP
IRFD9113 Vishay Siliconix

IRFD9113

MOSFET P-CH 60V 600MA 4DIP

Vishay Siliconix

5,738 -
Datasheet - 4-DIP (0.300", 7.62mm) Tube Obsolete P-Channel MOSFET (Metal Oxide) 60 V 600mA (Ta) - 1.6Ohm @ 300mA, 10V - 15 nC @ 15 V - 250 pF @ 25 V - - - - - Through Hole 4-HVMDIP
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FETs, MOSFETs FAQ

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