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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
FCU850N80Z Fairchild Semiconductor

FCU850N80Z

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor

1,000 -
Datasheet SuperFET® II TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 850mOhm @ 3A, 10V 4.5V @ 600µA 29 nC @ 10 V ±20V 1315 pF @ 100 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
FQI8N60CTU Fairchild Semiconductor

FQI8N60CTU

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor

6,000 -
Datasheet QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Tc) 10V 1.2Ohm @ 3.75A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1255 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK (TO-262)
FQI4N90TU Fairchild Semiconductor

FQI4N90TU

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor

1,502 -
Datasheet QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 900 V 4.2A (Tc) 10V 3.3Ohm @ 2.1A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1100 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK (TO-262)
HUFA75433S3ST Fairchild Semiconductor

HUFA75433S3ST

64A, 60V, 0.016OHM, N-CHANNEL MO

Fairchild Semiconductor

520 -
Datasheet UltraFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 64A (Tc) 10V 16mOhm @ 64A, 10V 4V @ 250µA 117 nC @ 20 V ±20V 1550 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
FDD6688 Fairchild Semiconductor

FDD6688

MOSFET N-CH 30V 84A DPAK

Fairchild Semiconductor

131,976 -
Datasheet PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 3845 pF @ 15 V - 83W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FQPF7N80C Fairchild Semiconductor

FQPF7N80C

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

1,000 -
Datasheet QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.9Ohm @ 3.3A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1680 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQPF8N80CYDTU Fairchild Semiconductor

FQPF8N80CYDTU

MOSFET N-CH 800V 8A TO220F-3

Fairchild Semiconductor

417 -
Datasheet - TO-220-3 Full Pack, Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.55Ohm @ 4A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2050 pF @ 25 V - 59W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3 (Y-Forming)
FCPF260N65FL1 Fairchild Semiconductor

FCPF260N65FL1

MOSFET N-CH 650V 15A TO220F

Fairchild Semiconductor

2,000 -
Datasheet FRFET®, SuperFET® II TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 260mOhm @ 7.5A, 10V 5V @ 1.5mA 60 nC @ 10 V ±20V 2340 pF @ 100 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQPF6N80T Fairchild Semiconductor

FQPF6N80T

MOSFET N-CH 800V 3.3A TO220F

Fairchild Semiconductor

3,715 -
Datasheet QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 3.3A (Tc) 10V 1.95Ohm @ 1.65A, 10V 5V @ 250µA 31 nC @ 10 V ±30V 1500 pF @ 25 V - 51W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQPF8N90C Fairchild Semiconductor

FQPF8N90C

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor

2,796 -
Datasheet QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 900 V 6.3A (Tc) 10V 1.9Ohm @ 3.15A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
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FETs, MOSFETs FAQ

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