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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
HUF75545P3 Fairchild Semiconductor

HUF75545P3

N-CHANNEL ULTRAFET POWER MOSFET

Fairchild Semiconductor

900 -
Datasheet UltraFET™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 10mOhm @ 75A, 10V 4V @ 250µA 235 nC @ 20 V ±20V 3750 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
FQI7N60TU Fairchild Semiconductor

FQI7N60TU

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor

1,000 -
Datasheet QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 1Ohm @ 3.7A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1430 pF @ 25 V - 3.13W (Ta), 142W (Tc) -55°C ~ 150°C (TJ) - - Through Hole I2PAK (TO-262)
FQPF5N90 Fairchild Semiconductor

FQPF5N90

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

450 -
Datasheet QFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 900 V 3A (Tc) 10V 2.3Ohm @ 1.5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1550 pF @ 25 V - 51W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FCPF380N60 Fairchild Semiconductor

FCPF380N60

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

2,934 -
Datasheet SuperFET® II TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 40 nC @ 10 V ±20V 1665 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FDMC7570S Fairchild Semiconductor

FDMC7570S

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor

4,336 -
Datasheet PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 27A (Ta), 40A (Tc) 4.5V, 10V 2mOhm @ 27A, 10V 3V @ 1mA 68 nC @ 10 V ±20V 4410 pF @ 13 V - 2.3W (Ta), 59W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power33
FCPF2250N80Z Fairchild Semiconductor

FCPF2250N80Z

MOSFET N-CH 800V 2.6A TO220F

Fairchild Semiconductor

360 -
Datasheet SuperFET® II TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 21.9W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQPF11N50CF Fairchild Semiconductor

FQPF11N50CF

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

1,000 -
Datasheet FRFET® TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 550mOhm @ 5.5A, 10V 4V @ 250µA 55 nC @ 10 V ±30V 2055 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FDMS8320LDC Fairchild Semiconductor

FDMS8320LDC

N-CHANNEL DUAL COOLTM 56 POWER T

Fairchild Semiconductor

41,418 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
FDA16N50LDTU Fairchild Semiconductor

FDA16N50LDTU

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor

28,520 -
Datasheet - TO-3P-3, SC-65-3, Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 16.5A (Tc) 10V 380mOhm @ 8.3A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1945 pF @ 25 V - 205W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN (L-Forming)
FQI27N25TU Fairchild Semiconductor

FQI27N25TU

MOSFET N-CH 250V 25.5A I2PAK

Fairchild Semiconductor

600 -
Datasheet QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 25.5A (Tc) 10V 110mOhm @ 12.75A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
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FETs, MOSFETs FAQ

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