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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RF1S50N06LESM Harris Corporation

RF1S50N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation

1,705 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 5V 22mOhm @ 50A, 5V 2V @ 250µA 120 nC @ 10 V ±10V 2100 pF @ 25 V - 142W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263AB
RFD16N05 Harris Corporation

RFD16N05

MOSFET N-CH 50V 16A IPAK

Harris Corporation

7,050 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
IRFD311 Harris Corporation

IRFD311

N-CHANNEL POWER MOSFET

Harris Corporation

1,332 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Active N-Channel MOSFET (Metal Oxide) 350 V 400mA (Tc) 10V 3.6Ohm @ 200mA, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole 4-DIP, Hexdip
RF1S530 Harris Corporation

RF1S530

N-CHANNEL POWER MOSFET

Harris Corporation

1,190 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
IRF841 Harris Corporation

IRF841

N-CHANNEL POWER MOSFET

Harris Corporation

800 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 450 V 8A (Tc) 10V 850mOhm @ 4.4A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1225 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
HUF75344S3 Harris Corporation

HUF75344S3

75A, 55V, 0.008 OHM, N-CHANNEL U

Harris Corporation

678 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK (TO-262)
IRF741 Harris Corporation

IRF741

N-CHANNEL POWER MOSFET

Harris Corporation

520 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 350 V 10A (Tc) 10V 550mOhm @ 5.2A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
IRFF232 Harris Corporation

IRFF232

N-CHANNEL POWER MOSFET

Harris Corporation

341 -
Datasheet - TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 4.5A (Tc) - - - - - - - 25W - - - Through Hole TO-205AF (TO-39)
RF1S50N06 Harris Corporation

RF1S50N06

50A, 60V, 0.022 OHM, N-CHANNEL

Harris Corporation

2,746 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK (TO-262)
RF1S630SM Harris Corporation

RF1S630SM

N-CHANNEL POWER MOSFET

Harris Corporation

2,098 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 6A (Tc) 10V 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AB
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