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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
RFD16N05L Harris Corporation

RFD16N05L

N-CHANNEL POWER MOSFET

Harris Corporation

31,022 -
Datasheet - TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 4V, 5V 47mOhm @ 16A, 5V 2V @ 250mA 80 nC @ 10 V ±10V - - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251AA
RF1S540 Harris Corporation

RF1S540

28A, 100V, 0.077 OHM, N-CHANNEL

Harris Corporation

4,101 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262 (I2PAK)
HUF76139S3 Harris Corporation

HUF76139S3

N-CHANNEL POWER MOSFET

Harris Corporation

800 -
Datasheet - TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V 3V @ 250µA 78 nC @ 10 V ±16V 2700 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole I2PAK (TO-262)
RFG40N10LE Harris Corporation

RFG40N10LE

N-CHANNEL POWER MOSFET

Harris Corporation

489 -
Datasheet * - Bulk Active - - - - - - - - - - - - - - - - -
IRFF9122 Harris Corporation

IRFF9122

P-CHANNEL POWER MOSFET

Harris Corporation

422 -
Datasheet - TO-205AF Metal Can Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 3.5A (Tc) - - - - - - - 20W - - - Through Hole TO-205AF (TO-39)
RFP42N03L Harris Corporation

RFP42N03L

MOSFET N-CH 30V 42A TO220AB

Harris Corporation

63,600 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) - 25mOhm @ 42A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
IRF730 Harris Corporation

IRF730

N-CHANNEL, MOSFET

Harris Corporation

24,025 -
Datasheet PowerMESH™ II TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 530 pF @ 25 V - 100W (Tc) 150°C (TJ) - - Through Hole TO-220
IRFD310 Harris Corporation

IRFD310

0.4A 400V 3.600 OHM N-CHANNEL

Harris Corporation

3,189 -
Datasheet - 4-DIP (0.300", 7.62mm) Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 350mA (Ta) 10V 3.6Ohm @ 210mA, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) - - Through Hole 4-DIP, Hexdip, HVMDIP
RF1S9640 Harris Corporation

RF1S9640

MOSFET P-CH 200V 11A TO220AB

Harris Corporation

4,500 -
Datasheet - TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) - 500mOhm @ 6A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
IRF831 Harris Corporation

IRF831

N-CHANNEL POWER MOSFET

Harris Corporation

1,610 -
Datasheet - TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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