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FETs, MOSFETs

Compare the current FETs, MOSFETs FETs, MOSFETs selection by manufacturer, stock status, datasheet and technical parameters. Use these details to narrow the list to parts that match your design, maintenance or purchasing requirements.

For a specific MPN, package, electrical rating or quantity requirement, send the details to EGOO. We can help confirm availability, quotation and alternative sourcing options.

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
IRFP440 Harris Corporation

IRFP440

MOSFET N-CH 500V 8.8A TO247-3

Harris Corporation

1,892 -
Datasheet - TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8.8A (Tc) 10V 850mOhm @ 5.3A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
IRFF111 Harris Corporation

IRFF111

N-CHANNEL POWER MOSFET

Harris Corporation

176 -
Datasheet - TO-205AF Metal Can Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 3.5A (Tc) 10V 600mOhm @ 1.5A, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 15W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-205AF (TO-39)
IRF244 Harris Corporation

IRF244

N-CHANNEL POWER MOSFET

Harris Corporation

26,290 -
Datasheet - TO-204AA, TO-3 Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3
RF1S4N100SM9A Harris Corporation

RF1S4N100SM9A

MOSFET N-CH 1000V 4.3A TO263AB

Harris Corporation

187 -
Datasheet - TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 1000 V 4.3A (Tc) - 3.5Ohm @ 2.5A, 10V 4V @ 250µA - ±20V - - 150W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AB
RFH30N12 Harris Corporation

RFH30N12

N-CHANNEL POWER MOSFET

Harris Corporation

268 -
Datasheet - TO-218-3 Isolated Tab, TO-218AC Bulk Active N-Channel MOSFET (Metal Oxide) 120 V 30A (Tc) 10V 75mOhm @ 15A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-218 Isolated
IRFP451 Harris Corporation

IRFP451

N-CHANNEL POWER MOSFET

Harris Corporation

538 -
Datasheet - TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 450 V 14A (Tc) 10V 400mOhm @ 7.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
RFH30N15 Harris Corporation

RFH30N15

N-CHANNEL POWER MOSFET

Harris Corporation

1,417 -
Datasheet - TO-218-3 Isolated Tab, TO-218AC Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 30A (Tc) 10V 75mOhm @ 15A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-218 Isolated
RFH10N50 Harris Corporation

RFH10N50

N-CHANNEL POWER MOSFET

Harris Corporation

302 -
Datasheet - TO-218-3 Isolated Tab, TO-218AC Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-218 Isolated
IRFP462 Harris Corporation

IRFP462

N-CHANNEL POWER MOSFET

Harris Corporation

152 -
Datasheet - TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 350mOhm @ 11A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 4100 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
IRF353 Harris Corporation

IRF353

N-CHANNEL POWER MOSFET

Harris Corporation

295 -
Datasheet - TO-204AA, TO-3 Bulk Active N-Channel MOSFET (Metal Oxide) 350 V 13A (Tc) 10V 400mOhm @ 8A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3
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